• 1243 Citations
  • 18 h-Index
1982 …2019
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Fingerprint Dive into the research topics where Hirofumi Shinohara is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 21 Similar Profiles
Static random access storage Engineering & Materials Science
Random access storage Engineering & Materials Science
Networks (circuits) Engineering & Materials Science
Electric potential Engineering & Materials Science
Transistors Engineering & Materials Science
Data storage equipment Engineering & Materials Science
Flip flop circuits Engineering & Materials Science
Silicon Engineering & Materials Science

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Research Output 1982 2019

  • 1243 Citations
  • 18 h-Index
  • 58 Conference contribution
  • 40 Article

A CMOS 0.85-V 15.8-nW current and voltage reference without resistors

Wang, J. & Shinohara, H., 2019 Apr, 2019 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2019. Institute of Electrical and Electronics Engineers Inc., 8741737. (2019 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

resistors
Resistors
CMOS
Electric potential
electric potential

A 373 F 2 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique

Liu, K., Min, Y., Yang, X., Sun, H. & Shinohara, H., 2018 Dec 14, 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 161-164 4 p. 8579315. (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Static random access storage
Bit error rate
Aging of materials
Temperature
1 Citation (Scopus)

High-throughput von Neumann post-processing for random number generator

Zhang, R., Chen, S., Wan, C. & Shinohara, H., 2018 Jun 5, 2018 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-4 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Random number Generator
Post-processing
High Throughput
Throughput
Output

Accurate nanopower supply-insensitive CMOS unit Vth extractor and α Vth extractor with continuous variety

Wang, J., Ding, L., Li, Q., Shinohara, H. & Inoue, Y., 2017 May 1, In : IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. E100A, 5, p. 1145-1155 11 p.

Research output: Contribution to journalArticle

Extractor
Oxides
Semiconductors
Metals
Voltage
3 Citations (Scopus)

Analysis and reduction of SRAM PUF Bit Error Rate

Shinohara, H., Zheng, B., Piao, Y., Liu, B. & Liu, S., 2017 Jun 5, 2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017. Institute of Electrical and Electronics Engineers Inc., 7939688

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Static random access storage
Bit error rate
Transistors
Hardware security