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  • 19 Similar Profiles
Diamond Chemical Compounds
Diamonds Engineering & Materials Science
diamonds Physics & Astronomy
field effect transistors Physics & Astronomy
Boron Chemical Compounds
Field effect transistors Engineering & Materials Science
Diamond films Engineering & Materials Science
Chemical vapor deposition Engineering & Materials Science

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Research Output 1980 2019

  • 6994 Citations
  • 45 h-Index
  • 280 Article
  • 26 Conference contribution
  • 9 Chapter

Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001)

Kono, S., Kageura, T., Hayashi, Y., Ri, S. G., Teraji, T., Takeuchi, D., Ogura, M., Kodama, H., Sawabe, A., Inaba, M., Hiraiwa, A. & Kawarada, H., 2019 Mar 1, In : Diamond and Related Materials. 93, p. 105-130 26 p.

Research output: Contribution to journalArticle

Chemical vapor deposition

Carboxyl-functionalized graphene SGFET: pH sensing mechanism and reliability of anodization

Falina, S., Syamsul, M., Iyama, Y., Hasegawa, M., Koga, Y. & Kawarada, H., 2019 Jan 1, In : Diamond and Related Materials. 91, p. 15-21 7 p.

Research output: Contribution to journalArticle

Gates (transistor)
Defect density
Functional groups

Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers

Kawai, S., Yamano, H., Sonoda, T., Kato, K., Buendia, J. J., Kageura, T., Fukuda, R., Okada, T., Tanii, T., Higuchi, T., Haruyama, M., Yamada, K., Onoda, S., Ohshima, T., Kada, W., Hanaizumi, O., Stacey, A., Teraji, T., Kono, S., Isoya, J. & 1 othersKawarada, H., 2019 Feb 14, In : Journal of Physical Chemistry C. 123, 6, p. 3594-3604 11 p.

Research output: Contribution to journalArticle


3.8 W/mm power density for ALD Al2 O 3 -based two-dimensional hole gas diamond MOSFET operating at saturation velocity

Imanishi, S., Horikawa, K., Oi, N., Okubo, S., Kageura, T., Hiraiwa, A. & Kawarada, H., 2018 Jan 1, (Accepted/In press) In : IEEE Electron Device Letters.

Research output: Contribution to journalArticle

MOSFET devices
Field effect transistors
1 Citation (Scopus)

Electrical contact properties between carbon nanotube ends and a conductive atomic force microscope tip

Inaba, M., Ohara, K., Shibuya, M., Ochiai, T., Yokoyama, D., Norimatsu, W., Kusunoki, M. & Kawarada, H., 2018 Jun 28, In : Journal of Applied Physics. 123, 24, 244502.

Research output: Contribution to journalArticle

electric contacts
carbon nanotubes
electrical resistivity