• 808 Citations
  • 15 h-Index
1976 …2019

Research output per year

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Research Output

  • 808 Citations
  • 15 h-Index
  • 41 Article
  • 39 Conference article
  • 13 Conference contribution
  • 8 Paper
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Conference contribution
2016

On the scaling limit of the Si-IGBTs with very narrow mesa structure

Eikyu, K., Sakai, A., Matsuura, H., Nakazawa, Y., Akiyama, Y., Yamaguchi, Y. & Inuishi, M., 2016 Jul 25, Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., Vol. 2016-July. p. 211-214 4 p. 7520815

Research output: Chapter in Book/Report/Conference proceedingConference contribution

24 Citations (Scopus)
2011

Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation

Kawabata, K., Tanizawa, M., Ishikawa, K., Inoue, Y., Inuishi, M. & Nishimura, T., 2011 Nov 1, 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011. p. 55-58 4 p. 6035048. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
2006

A 65 nm SoC embedded 6T-SRAM design for manufacturing with read and write cell stabilizing circuits

Ohbayashi, S., Yabuuchi, M., Nii, K., Tsukamoto, Y., Imaoka, S., Oda, Y., Igarashi, M., Takeuchi, M., Kawashima, H., Makino, H., Yamaguchi, Y., Tsukamoto, K., Inuishi, M., Ishibashi, K. & Shinohara, H., 2006 Dec 1, 2006 Symposium on VLSI Circuits, VLSIC - Digest of Technical Papers. p. 17-18 2 p. 1705290. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

41 Citations (Scopus)
2004

Body bias controlled SOI technology with HTI

Tsujiuchi, M., Hirano, Y., Iwamatsu, T., Ipposhi, T., Maegawa, S., Inuishi, M. & Ohji, Y., 2004, IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc., p. 131-132 2 p. 1566443

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Impact of boron penetration from S/D-extension on gate leakage current and gate-oxide reliability for 65-nm node CMOS and beyond

Yamashita, T., Shiga, K., Hayashi, T., Umeda, H., Oda, H., Eimori, T., Inuishi, M., Ohji, Y., Eriguchi, K., Nakanishi, K., Nakaoka, H., Yamada, T., Nakamura, M., Miyanaga, I., Kajiya, A., Kubota, M. & Ogura, M., 2004, IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc., p. 123-124 2 p. 1566439

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2001

Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source

Takai, M., Arita, Y., Abo, S., Iwamatsu, T., Maegawa, S., Sayama, H., Yamaguchi, Y., Inuishi, M. & Nishimura, T., 2001 Jan 1, European Solid-State Device Research Conference. Ryssel, H., Wachutka, G. & Grunbacher, H. (eds.). IEEE Computer Society, p. 17-24 8 p. (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1999

Bulk-layout-compatible 0.18 μm SOI-CMOS technology using body-fixed partial trench isolation (PTI)

Hirano, Y., Maeda, S., Matsumoto, T., Nii, K., Iwamatsu, T., Yamaguchi, Y., Ipposhi, T., Kawashima, H., Maegawa, S., Inuishi, M. & Nishimura, T., 1999 Jan 1, 1999 IEEE International SOI Conference, SOI 1999 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 131-132 2 p. 819887. (1999 IEEE International SOI Conference, SOI 1999 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1993

Novel NICE (Nitrogen implantation into CMOS gate electrode and source-drain) structure for high reliability and high performance 0. 25μm dual gate CMOS

Kuroi, T., Yamaguchi, T., Shirahata, M., Okumura, Y., Kawasaki, Y., Inuishi, M. & Tsubouchi, B., 1993 Dec 1, Technical Digest - International Electron Devices Meeting. Anon (ed.). Publ by IEEE, p. 324-328 5 p. (Technical Digest - International Electron Devices Meeting).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)
1991

Gate capacitance characteristics of gate N/sup -/ overlap LDD transistor with high performance and high reliability

Inuishi, M., Mitsui, K., Kusunoki, S., Oda, H., Tsukamoto, K. & Akasaka, Y., 1991, International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., Vol. 1991-January. p. 371-374 4 p. 235376

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs

Kusunoki, S., Inuishi, M., Yamaguchi, T., Tsukamoto, K. & Akasaka, Y., 1991, International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., Vol. 1991-January. p. 649-652 4 p. 235388

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
1989

A highly reliable gate/n- overlapped transistor for mega-bit DRAMs

Nagatomo, M., Okumura, Y., Mitsui, K., Ogoh, I., Genjoh, H., Inuishi, M. & Matsukawa, T., 1989 Jan 1, ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. Heuberger, A., Ryssel, H. & Lange, P. (eds.). IEEE Computer Society, p. 923-926 4 p. 5437066. (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
1987

MeV-BORON IMPLANTED BURIED BARRIER FOR SOFT ERROR REDUCTION IN MEGABIT DRAM.

Matsuda, Y., Tsukamoto, K., Inuishi, M., Shimizu, M., Asakura, M., Fujishima, K., Komori, J. & Akasaka, Y., 1987, Conference on Solid State Devices and Materials. Japan Soc of Applied Physics, p. 23-26 4 p. (Conference on Solid State Devices and Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)
1985

SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT.

Kato, T., Morimoto, H., Tsukamoto, K., Shinohara, H. & Inuishi, M., 1985 Dec 1, Digest of Technical Papers - Symposium on VLSI Technology. Business Cent for Academic Soc Japan, p. 72-73 2 p. (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution