• 808 Citations
  • 15 h-Index
1976 …2019

Research output per year

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Research Output

  • 808 Citations
  • 15 h-Index
  • 41 Article
  • 39 Conference article
  • 13 Conference contribution
  • 8 Paper
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Article
2007

A 65-nm SoC embedded 6T-SRAM designed for manufacturability with read and write operation stabilizing circuits

Ohbayashi, S., Yabuuchi, M., Nil, K., Tsukamoto, Y., Imaoka, S., Oda, Y., Yoshihara, T., Igarashi, M., Takeuchi, M., Kawashima, H., Yamaguchi, Y., Tsukamoto, K., Inuishi, M., Makino, H., Ishibashi, K. & Shinohara, H., 2007 Apr 1, In : IEEE Journal of Solid-State Circuits. 42, 4, p. 820-829 10 p.

Research output: Contribution to journalArticle

86 Citations (Scopus)
2005

Novel shallow trench isolation process from viewpoint of total strain process design for 45 nm node devices and beyond

Ishibashi, M., Horita, K., Sawada, M., Kitazawa, M., Igarashi, M., Kuroi, T., Eimori, T., Kobayashi, K., Inuishi, M. & Ohji, Y., 2005 Apr 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 4 B, p. 2152-2156 5 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Suppression of boron penetration from source/drain-extension to improve gate leakage characteristics and gate-oxide reliability for 65-nm node CMOS and beyond

Hayashi, T., Yamashita, T., Shiga, K., Hayashi, K., Oda, H., Eimori, T., Inuishi, M. & Ohji, Y., 2005 Apr 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 4 B, p. 2157-2160 4 p.

Research output: Contribution to journalArticle

2004

W-polymetal gate with low W/poly-Si interface resistance for high-speed/high-density embedded memory

Yamashita, T., Nishida, Y., Hayashi, K., Eimori, T., Inuishi, M. & Ohji, Y., 2004 Apr, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 B, p. 1799-1803 5 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)
2003

An artificial fingerprint device (AFD): A study of identification number applications utilizing characteristics variation of polycrystalline silicon TFTs

Maeda, S., Kuriyama, H., Ipposhi, T., Maegawa, S., Inoue, Y., Inuishi, M., Kotani, N. & Nishimura, T., 2003 Jun 1, In : IEEE Transactions on Electron Devices. 50, 6, p. 1451-1458 8 p.

Research output: Contribution to journalArticle

21 Citations (Scopus)
2002

Advanced retrograde well technology for 90-nm-node embedded static random access memory using high-energy parallel beam

Yamashita, T., Kltazawa, M., Kawasaki, Y., Takashino, H., Kuroi, T., Inoue, Y. & Inuishi, M., 2002 Apr 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41, 4 B, p. 2399-2403 5 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Clarification of floating-body effects on drive current and short channel effect in deep sub-0.25 μm partially depleted SOI MOSFETs

Matsumoto, T., Maeda, S., Hirano, Y., Eikyu, K., Yamaguchi, Y., Maegawa, S., Inuishi, M. & Nishimura, T., 2002 Jan 1, In : IEEE Transactions on Electron Devices. 49, 1, p. 55-60 6 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)
2001

Bulk-layout-compatible 0.18-μm SOI-CMOS technology using body-tied partial-trench-isolation (PTI)

Hirano, Y., Maeda, S., Matsumoto, T., Nii, K., Iwamatsu, T., Yamaguchi, Y., Ipposhi, T., Kawashima, H., Maegawa, S., Inuishi, M. & Nishimura, T., 2001 Dec 1, In : IEEE Transactions on Electron Devices. 48, 12, p. 2816-2822 7 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)

Feasibility of 0.18 μm SOI CMOS technology using hybrid trench isolation with high resistivity substrate for embedded RF/analog applications

Maeda, S., Wada, Y., Yamamoto, K., Komurasaki, H., Matsumoto, T., Hirano, Y., Iwamatsu, T., Yamaguchi, Y., Ipposhi, T., Ueda, K., Mashiko, K., Maegawa, S. & Inuishi, M., 2001 Sep 1, In : IEEE Transactions on Electron Devices. 48, 9, p. 2065-2073 9 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)
2000

Direct measurement of transient drain currents in partially-depleted SOI N-channel MOSFETs using a nuclear microprobe for highly reliable device designs

Iwamatsu, T., Nakayama, K., Takaoka, H., Takai, M., Yamaguchi, Y., Maegawa, S., Inuishi, M., Kinomura, A., Horino, Y. & Nlshimura, T., 2000, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 39, 4 B, p. 2236-2240 5 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)
3 Citations (Scopus)
1998

Approaches to extra low voltage dram operation by soi-dram

Eimori, T., Oashi, T., Morishita, F., Iwamatsu, T., Yamaguchi, Y., Okuda, F., Shimomura, K. N. I., Shimano, H., Sakashita, N., Arimoto, K., Inoue, Y., Komori, S., Inuishi, M., Nishimura, T. & Miyoshi, H., 1998 Dec 1, In : IEEE Transactions on Electron Devices. 45, 5, p. 1000-1009 10 p.

Research output: Contribution to journalArticle

15 Citations (Scopus)

Scalability of gate/N- overlapped lightly doped drain in deep-submicrometer regime

Shimizu, M., Mitsui, K., Inuishi, M., Arima, H. & Hamaguchi, C., 1998 Dec, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 37, 12, p. 6340-6347 8 p.

Research output: Contribution to journalArticle

1997

A 1-V 46-ns 16-Mb SOI-DRAM with body control technique

Shimomura, K., Shimano, H., Sakashita, N., Okuda, F., Oashi, T., Yamaguchi, Y., Eimori, T., Inuishi, M., Arimoto, K., Maegawa, S., Inoue, Y., Komori, S. & Kyuma, K., 1997 Nov, In : IEEE Journal of Solid-State Circuits. 32, 11, p. 1712-1718 7 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Application of nitrogen implantation to ULSI

Murakami, T., Kuroi, T., Kawasaki, Y., Inuishi, M., Matsui, Y. & Yasuoka, A., 1997 Jan, In : Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 121, 1-4, p. 257-261 5 p.

Research output: Contribution to journalArticle

25 Citations (Scopus)

Control of carrier collection efficiency in n+p diode with retrograde well and epitaxial layers

Kishimoto, T., Takai, M., Ohno, Y., Nishimura, T. & Inuishi, M., 1997 Jun, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 6 A, p. 3460-3462 3 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Suppression of charge carrier collection in diode with retrograde well and epitaxial layers for soft-error immunity

Kishimoto, T., Takai, M., Ohno, Y., Nishimura, T., Inuishi, M., Kinomura, A., Horino, Y. & Fujii, K., 1997 Jul, In : Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 130, 1-4, p. 524-527 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

The effects on metal oxide semiconductor field effect transistor properties of nitrogen implantation into p+ polysilicon gate

Yasuoka, A., Kuroi, T., Shimizu, S., Shirahata, M., Okumura, Y., Inoue, Y., Inuishi, M., Nishimura, T. & Miyoshi, H., 1997, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 2, p. 617-622 6 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)
1996

Clarification of nitridation effect on oxide formation methods

Kuroi, T., Shirahata, M., Okumura, Y., Shimizu, S., Teramoto, A., Anma, M., Inuishi, M. & Miyoshi, H., 1996 Feb, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 35, 2 SUPPL. B, p. 1454-1459 6 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)
3 Citations (Scopus)

Reliability of source-to-drain non-uniformly doped channel (NUDC) mOSFETs for sub-quarter-micron region

Shirahata, M., Okumura, Y., Abe, Y., Kuroi, T., Inuishi, M. & Miyoshi, H., 1996 Feb, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 35, 2 SUPPL. B, p. 874-881 8 p.

Research output: Contribution to journalArticle

Reliability simulation of AC hot carrier degradation for deep sub-micron MOSFETs

Shimizu, S., Tanizawa, M., Kusunoki, S., Inuishi, M. & Miyoshi, H., 1996 Nov, In : Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi). 79, 11, p. 19-27 9 p.

Research output: Contribution to journalArticle

Substrate engineering for reduction of alpha-particle-induced charge collection efficiency

Yamashita, T., Komori, S., Kuroi, T., Inuishi, M. & Miyoshi, H., 1996 Feb, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 35, 2 SUPPL. B, p. 869-873 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)
1995

New p-mosfet hot-carrier degradation model for bi-directional operation

Shimizu, S., Tanizawa, M., Kusunoki, S., Inuishi, M. & Tsubouchi, N., 1995 Feb, In : Japanese journal of applied physics. 34, 2S, p. 889-894 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

The impact of nitrogen implantation into highly doped polysilicon gates for highly reliable and high-performance sub-quarter-micron dual-gate complementary metal oxide semiconductor

Kuroi, T., Kobayashi, M., Shirahata, M., Okumura, Y., Kusunoki, S., Inuishi, M. & Tsubouchi, N., 1995 Feb, In : Japanese journal of applied physics. 34, 2S, p. 771-775 5 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)
1994

Bipolar transistor with a buried layer formed by high-energy ion implantation for subhalf-micron bipolar-complementary metal oxide semiconductor LSIs

Kuroi, T., Kawasaki, Y., Ishigaki, Y., Kinoshita, Y., Inuishi, M., Tsukamoto, K. & Tsubouchi, N., 1994 Jan 1, In : Japanese journal of applied physics. 33, 1, p. 541-545 5 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Deep submicron field isolation with buried insulator between polysilicon electrodes (BIPS)

Shimizu, M., Inuishi, M., Tsukamoto, K., Arima, H. & Miyoshi, H., 1994 Aug 1, In : IEICE Transactions on Electronics. E77-C, 8, p. 1369-1375 7 p.

Research output: Contribution to journalArticle

1993

Novel CMOS structure with polysilicon source/drain (PSD) transistors by self-aligned silicidation

Shimizu, M., Yamaguchi, T., Inuishi, M. & Tsukamoto, K., 1993 Apr 1, In : IEICE Transactions on Electronics. E76-C, 4, p. 532-540 9 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Proximity gettering of heavy metals by high-energy ion implantation

Kuroi, T., Kawasaki, Y., Komori, S., Fukumoto, K., Inuishi, M., Tsukamoto, K., Shinyashiki, H. & Shingyoji, T., 1993 Jan, In : Japanese journal of applied physics. 32, 1 S, p. 303-307 5 p.

Research output: Contribution to journalArticle

34 Citations (Scopus)
1991

Graded-Junction Gate/n Overlapped LDD MOSFET Structures for High Hot-Carrier Reliability

Okumura, Y., Kunikiyo, T., Ogoh, I., Genjo, H., Inuishi, M., Nagatomo, M. & Matsukawa, T., 1991 Dec, In : IEEE Transactions on Electron Devices. 38, 12, p. 2647-2656 10 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)
1988

High-performance 0.5μm transistors

Inuishi, M., 1988 Sep 1, In : Mitsubishi Electric Advance. 44, p. 6-8 3 p.

Research output: Contribution to journalArticle

1987

Submicrometer-Gate MOSFET's by the Use of Focused-Ion-Beam Exposure and a Dry Development Technique

Morimoto, H., Tsukamoto, K., Shinohara, H., Inuishi, M. & Kato, T., 1987 Feb, In : IEEE Transactions on Electron Devices. 34, 2, p. 230-234 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
1983

Deep level transient spectroscopy of interface and bulk trap states in InP metal/oxide/semiconductor structures

Inuishi, M. & Wessels, B. W., 1983, In : Thin Solid Films. 103, 1-3, p. 141-153 13 p.

Research output: Contribution to journalArticle

18 Citations (Scopus)
1982

Growth and characterization of vapor deposited indium phosphide

Wessels, B. W. & Inuishi, M., 1982 Sep 15, In : Proceedings of SPIE - The International Society for Optical Engineering. 323, p. 55-61 7 p.

Research output: Contribution to journalArticle

Vapor growth of thin heteroepitaxial InP films on CdS

Inuishi, M. & Wessels, B. W., 1982 Feb 19, In : Thin Solid Films. 88, 3, p. 195-202 8 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
1981

Deep hole traps in VPE p-type InP

Inuishi, M. & Wessels, B. W., 1981 Sep 17, In : Electronics Letters. 17, 19, p. 685-686 2 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)
1980

The Chemical Vapor Deposition of Polycrystalline InP

Inuishi, M. & Wessels, B. W., 1980 Dec, In : Journal of the Electrochemical Society. 127, 12, p. 2747-2750 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)
1976

A thermally produced large single crystal of CuZnGa martensite

Saburi, T., Nenno, S. & Inuishi, M., 1976 Oct, In : Scripta Metallurgica. 10, 10, p. 875-877 3 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)