• 926 Citations
  • 15 h-Index
1975 …2016
If you made any changes in Pure these will be visible here soon.

Research Output 1975 2016

  • 926 Citations
  • 15 h-Index
  • 94 Article
  • 22 Conference contribution
  • 8 Chapter
  • 1 Comment/debate
2016

Scenario in synthetic-type research: Its role and description an investigation from synthesiology papers

Ono, A., Akamatsu, M. & Kobayashi, N., 2016 Mar 19, In : Synthesiology. 9, 1, p. 26-38 13 p.

Research output: Contribution to journalArticle

scenario
scientific journal
editor
university
language
1 Citation (Scopus)

Scenario in synthetic-type research: Its role and description: An investigation from synthesiology papers

Ono, A., Akamatsu, M. & Kobayashi, N., 2016 Mar 19, In : Synthesiology. 9, 1, p. 27-41 15 p.

Research output: Contribution to journalArticle

scenario
scientific journal
editor
university
language
2013
evaluation research
Japan
university
evaluation
Education

System design management and Synthesiology: Methodology to tackle the issues of modern society and to utilize the research results in the society

Maeno, T., Nishimura, H., TAKANO, K., Kohtake, N., Nakashima, H., Akamatsu, M. & Kobayashi, N., 2013, In : Synthesiology. 6, 4, p. 246-254 9 p.

Research output: Contribution to journalArticle

Systems analysis
2012
2 Citations (Scopus)
research results
methodology
Feedback
nanotechnology
Biotechnology
2011
1 Citation (Scopus)
evaluation research
evaluation
research organization
2008

Hope for synthesiology

Kobayashi, N., 2008, In : Synthesiology. 1, 2, p. 131-137 7 p.

Research output: Contribution to journalArticle

Reviewing papers in the new style

Akamatsu, M., Igarashi, K., Ono, A., Kobayashi, N., Mochimaru, M. & Yumoto, N., 2008, In : Synthesiology. 1, 2, p. 143-149 7 p.

Research output: Contribution to journalArticle

Synthesiology: Letter from the editor

Kobayashi, N., 2008, In : Synthesiology. 1, 4, p. 296 1 p.

Research output: Contribution to journalArticle

2005

New optical device technologies for ultrafast OTDM systems

Sakurai, T. & Kobayashi, N., 2005 Dec, In : Journal of Optical and Fiber Communications Reports. 2, 6, p. 530-557 28 p.

Research output: Contribution to journalArticle

Optical devices
optoelectronic devices
Optoelectronic devices
picosecond pulses
Wavelength division multiplexing
2003
6 Citations (Scopus)

Beryllium implantation induced deep level defects in p-type 6h-silicon carbide

Chen, X. D., Ling, C. C., Fung, S., Beling, C. D., Gong, M., Henkel, T., Tanoue, H. & Kobayashi, N., 2003 Mar 1, In : Journal of Applied Physics. 93, 5, p. 3117-3119 3 p.

Research output: Contribution to journalArticle

beryllium
silicon carbides
implantation
defects
ionization
15 Citations (Scopus)

Characterization of capacitance-voltage features of Ni/diamond Schottky diodes on oxidized boron-doped homoepitaxial diamond film

Chen, Y. G., Ogura, M., Okushi, H. & Kobayashi, N., 2003 Aug, In : Diamond and Related Materials. 12, 8, p. 1340-1345 6 p.

Research output: Contribution to journalArticle

Diamond
Boron
Diamond films
Schottky diodes
diamond films
37 Citations (Scopus)

Structural change induced in TiO2 by swift heavy ions and its application to three-dimensional lithography

Nomura, K. I., Nakanishi, T., Nagasawa, Y., Ohki, Y., Awazu, K., Fujimaki, M., Kobayashi, N., Ishii, S. & Shima, K., 2003 Aug, In : Physical Review B - Condensed Matter and Materials Physics. 68, 6, p. 641061-641068 8 p., 064106.

Research output: Contribution to journalArticle

Heavy Ions
Heavy ions
Lithography
heavy ions
lithography
2002
23 Citations (Scopus)

Difference of secondary defect formation by high energy B + and Al + implantation into 4H-SiC

Ohno, T. & Kobayashi, N., 2002 Apr 1, In : Journal of Applied Physics. 91, 7, p. 4136-4142 7 p.

Research output: Contribution to journalArticle

implantation
defects
interstitials
energy
agglomeration
15 Citations (Scopus)

Electrical properties of graphite/homoepitaxial diamond contact

Chen, Y. G., Hasegawa, M., Okushi, H., Koizumi, S., Yoshida, H., Sakai, T. & Kobayashi, N., 2002 Mar, In : Diamond and Related Materials. 11, 3-6, p. 451-457 7 p.

Research output: Contribution to journalArticle

Diamond
Graphite
Diamond films
diamond films
Boron
1 Citation (Scopus)

Electrical properties of graphite/p-type homoepitaxial diamond contact

Chen, Y. G., Hasegawa, M., Yamanaka, S., Okushi, H. & Kobayashi, N., 2002, In : Materials Science Forum. 389-393, 2, p. 945-948 4 p.

Research output: Contribution to journalArticle

Diamond
Boron
Graphite
Diamonds
boron
4 Citations (Scopus)

Photoluminescence characterization of beryllium-implanted 6H-silicon carbide

Chen, X. D., Fung, S., Beling, C. D., Huang, Y., Li, Q., Xu, S. J., Gong, M., Henkel, T., Tanoue, H. & Kobayashi, N., 2002 Jan 2, In : Solid State Communications. 121, 2-3, p. 67-71 5 p.

Research output: Contribution to journalArticle

Beryllium
beryllium
Silicon carbide
silicon carbides
Photoluminescence

Substitution and electrical activation of carbon in C- and C + P-implanted InP

Kushida, K., Ogawa, O., Kuriyama, K., Hayashi, N., Ogura, M., Hasegawa, M. & Kobayashi, N., 2002 May, In : Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 190, 1-4, p. 869-872 4 p.

Research output: Contribution to journalArticle

Substitution reactions
Carbon
Chemical activation
activation
Annealing
2001
2 Citations (Scopus)

Beryllium implantation induced deep levels in 6H-silicon carbide

Chen, X. D., Fung, S., Beling, C. D., Gong, M., Henkel, T., Tanoue, H. & Kobayashi, N., 2001 Dec, In : Physica B: Condensed Matter. 308-310, p. 718-721 4 p.

Research output: Contribution to journalArticle

Beryllium
beryllium
Silicon carbide
silicon carbides
implantation

Defect characteristics in sulfur-implanted CVD homoepitaxial diamond

Hasegawa, M., Ogura, M., Takeuchi, D., Yamanaka, S., Watanabe, H., Ri, S., Kobayashi, N., Okushi, H. & Sekiguchi, T., 2001, In : Solid State Phenomena. 78-79, p. 171-176 6 p.

Research output: Contribution to journalArticle

Diamond
Sulfur
Chemical vapor deposition
Diamonds
sulfur
6 Citations (Scopus)

Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry

Henkel, T., Tanaka, Y., Kobayashi, N., Tanoue, H. & Hishita, S., 2001 Jan 8, In : Applied Physics Letters. 78, 2, p. 231-233 3 p.

Research output: Contribution to journalArticle

beryllium
silicon carbides
secondary ion mass spectrometry
annealing
sublimation
14 Citations (Scopus)

Fabrication of heterostructure p-β-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates

Katsumata, H., Makita, Y., Takada, T., Tanoue, H., Kobayashi, N., Hasegawa, M., Kakemoto, H., Tsukamoto, T. & Uekusa, S., 2001 Jan 15, In : Thin Solid Films. 381, 2, p. 244-250 7 p.

Research output: Contribution to journalArticle

Ion implantation
Heterojunctions
implantation
Diodes
diodes
10 Citations (Scopus)

Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP

Kuriyama, K., Kondo, H., Hayashi, N., Ogura, M., Hasegawa, M., Kobayashi, N., Takahashi, Y. & Watanabe, S., 2001 Oct 15, In : Applied Physics Letters. 79, 16, p. 2546-2548 3 p.

Research output: Contribution to journalArticle

nitrogen ions
wurtzite
annealing
synthesis
Auger spectroscopy
5 Citations (Scopus)

Photoluminescence study of beryllium implantation induced intrinsic defects in 6H-silicon carbide

Fung, S., Chen, X. D., Beling, C. D., Huang, Y., Li, Q., Xu, S. J., Gong, M., Henkel, T., Tanoue, H. & Kobayashi, N., 2001 Dec, In : Physica B: Condensed Matter. 308-310, p. 710-713 4 p.

Research output: Contribution to journalArticle

Beryllium
beryllium
Silicon carbide
silicon carbides
implantation
6 Citations (Scopus)

Spatially resolved study of superconducting tunnel junctions X-ray detectors by low temperature scanning synchrotron microscopy

Pressler, H., Ohkubo, M., Koike, M., Zama, T., Fukuda, D. & Kobayashi, N., 2001 Mar, In : IEEE Transactions on Applied Superconductivity. 11, 1 I, p. 696-699 4 p.

Research output: Contribution to journalArticle

Tunnel junctions
Synchrotrons
tunnel junctions
Microscopic examination
synchrotrons
30 Citations (Scopus)

Structure and distribution of secondary defects in high energy ion implanted 4H-SiC

Ohno, T. & Kobayashi, N., 2001 Jan 15, In : Journal of Applied Physics. 89, 2, p. 933-941 9 p.

Research output: Contribution to journalArticle

defects
ions
energy
dosage
secondary ion mass spectrometry
2000
10 Citations (Scopus)

A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC

Chen, X. D., Fung, S., Beling, C. D., Gong, M., Henkel, T., Tanoue, H. & Kobayashi, N., 2000 Oct, In : Journal of Applied Physics. 88, 8, p. 4558-4562 5 p.

Research output: Contribution to journalArticle

beryllium
defects
traps
spectroscopy
implantation
1 Citation (Scopus)

Analysis of histidine-dependent antitermination in Bacillus subtilis hut operon.

Oda, M., Kobayashi, N., Kurusu, Y. & Fujita, M., 2000, In : Nucleic acids symposium series. 44, p. 5-6 2 p.

Research output: Contribution to journalArticle

Operon
Bacillus subtilis
Histidine
Binding Sites
Ethylnitrosourea

Beryllium implantation doping of silicon carbide

Henkel, T., Tanaka, Y., Kobayashi, N., Nishizawa, S. & Hishita, S., 2000, Materials Science Forum. Trans Tech Publ Ltd, Vol. 338.

Research output: Chapter in Book/Report/Conference proceedingChapter

Beryllium
Silicon carbide
Ion implantation
Doping (additives)
Graphite

Characterization of n-type layer by S + ion implantation in 4H-SiC

Tanaka, Y., Kobayashi, N., Okumura, H., Yoshida, S., Hasegawa, M., Ogura, M. & Tanoue, H., 2000, Materials Research Society Symposium - Proceedings. Shul, R. J., Ren, F., Pletschen, W. & Murakami, M. (eds.). Vol. 622.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ion implantation
Rutherford backscattering spectroscopy
Spectrometry
Photoluminescence
Activation energy
1 Citation (Scopus)

Coimplantation effects of (C and Si)/Ga in 6H-SiC

Tanaka, Y., Kobayashi, N., Hasegawa, M., Ogura, M., Ishida, Y., Yoshida, S., Okumura, H. & Tanoue, H., 2000, Materials Science Forum. Trans Tech Publ Ltd, Vol. 338.

Research output: Chapter in Book/Report/Conference proceedingChapter

Gallium
Silicon
Chemical activation
Hall effect
Rutherford backscattering spectroscopy
4 Citations (Scopus)

Effects of fluxoid trapping on signal creation in superconducting tunnel junction X-ray detectors

Ohkubo, M., Tanabe, K., Suzuki, K., Pressler, H., Ukibe, M., Kobayashi, N., Nakamura, T., Kishimoto, M., Katagiri, M., Fukuda, D., Takahashi, H. & Nakazawa, M., 2000 Apr 7, In : Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 444, 1, p. 237-240 4 p.

Research output: Contribution to journalArticle

Tunnel junctions
tunnel junctions
Vortex flow
trapping
Detectors
7 Citations (Scopus)

Electrical and structural properties of Al and B implanted 4H-SiC

Tanaka, Y., Kobayashi, N., Okumura, H., Suzuki, R., Ohdaira, T., Hasegawa, M., Ogura, M., Yoshida, S. & Tanoue, H., 2000, Materials Science Forum. Trans Tech Publ Ltd, Vol. 338.

Research output: Chapter in Book/Report/Conference proceedingChapter

Positrons
Aluminum
Structural properties
Electric properties
Vacancies
1 Citation (Scopus)

Electrical characteristics and surface morphology for arsenic ion-implanted 4H-SiC at high temperature

Senzaki, J., Fukuda, K., Imai, S., Tanaka, Y., Kobayashi, N., Tanoue, H., Okushi, H. & Arai, K., 2000, Materials Science Forum. Trans Tech Publ Ltd, Vol. 338.

Research output: Chapter in Book/Report/Conference proceedingChapter

Arsenic
Surface morphology
Doping (additives)
Ions
Electron devices

Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide

Senzaki, J., Fukuda, K., Ishida, Y., Tanaka, Y., Tanoue, H., Kobayashi, N., Tanaka, T. & Arai, K., 2000, Materials Research Society Symposium - Proceedings. Shul, R. J., Ren, F., Pletschen, W. & Murakami, M. (eds.). Vol. 622.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hall effect
Arsenic
Silicon carbide
Activation energy
Hall mobility
15 Citations (Scopus)

Hot-implantation of phosphorus ions into 4H-SiC

Imai, S., Kobayashi, S., Shinohe, T., Fukuda, K., Tanaka, Y., Senzaki, J., Tanoue, H., Kobayashi, N. & Okushi, H., 2000, Materials Science Forum. Trans Tech Publ Ltd, Vol. 338.

Research output: Chapter in Book/Report/Conference proceedingChapter

Ion implantation
Phosphorus
Ions
Sheet resistance
Annealing
3 Citations (Scopus)

Ion-beam annealing of diamond using Ar ions up to 400 keV

Ogura, M., Hasegawa, M., Tanaka, Y. & Kobayashi, N., 2000 Mar, In : Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 161, p. 1043-1047 5 p.

Research output: Contribution to journalArticle

Diamond
Ion beams
Diamonds
diamonds
ion beams
11 Citations (Scopus)

Post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

Senzaki, J., Fukuda, K., Imai, S., Tanaka, Y., Kobayashi, N., Tanoue, H., Okushi, H. & Arai, K., 2000 Jun, In : Applied Surface Science. 159, p. 544-549 6 p.

Research output: Contribution to journalArticle

Arsenic
arsenic
Silicon carbide
silicon carbides
Surface morphology
1 Citation (Scopus)

Secondary defect distribution in high energy ion implanted 4H-SiC

Ohno, T. & Kobayashi, N., 2000, Materials Science Forum. Trans Tech Publ Ltd, Vol. 338.

Research output: Chapter in Book/Report/Conference proceedingChapter

Ions
Defects
Secondary ion mass spectrometry
Doping (additives)
Transmission electron microscopy
1 Citation (Scopus)

Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching

Henkel, T., Ferro, G., Nishizawa, S., Pressler, H., Tanaka, Y., Tanoue, H. & Kobayashi, N., 2000, Materials Science Forum. Trans Tech Publ Ltd, Vol. 338.

Research output: Chapter in Book/Report/Conference proceedingChapter

Wet etching
Silicon carbide
Ion implantation
Etching
Rutherford backscattering spectroscopy
1 Citation (Scopus)

Structural properties of sulfur-implanted diamond single crystals

Hasegawa, M., Ogura, M., Takeuchi, D., Yamanaka, S., Watanabe, H., Ri, S. G., Kobayashi, N. & Okushi, H., 2000, Proceedings of the International Conference on Ion Implantation Technology. p. 773-776 4 p. 924268

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Diamond
Sulfur
Structural properties
Diamonds
sulfur
4 Citations (Scopus)

Thermal properties of calorimeters with Ti/Au transition-edge sensors on silicon nitride membranes

Ukibe, M., Tanaka, K., Koyanagi, M., Morooka, T., Pressler, H., Ohkubo, M. & Kobayashi, N., 2000 Apr 7, In : Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 444, 1, p. 257-259 3 p.

Research output: Contribution to journalArticle

Calorimeters
Silicon nitride
silicon nitrides
calorimeters
Thermodynamic properties
1 Citation (Scopus)

X-ray pulse-shape analysis on bridge-type microcalorimeters with Ti-Au transition-edge sensors

Ukibe, M., Tanaka, K., Hirayama, F., Mizuki, T., Hikosaka, T., Morooka, T., Chinone, K., Kawabe, U., Nemoto, T., Koyanagi, M., Ohkubo, M. & Kobayashi, N., 2000, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4140. p. 376-383 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

calorimeters
Calorimeters
X rays
SQUIDs
sensors
1999
5 Citations (Scopus)

Characteristics of Ti films for transition-edge sensor microcalorimeters

Ukibe, M., Koyanagi, M., Ohkubo, M., Pressler, H. & Kobayashi, N., 1999 Oct 21, In : Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 436, 1-2, p. 256-261 6 p.

Research output: Contribution to journalArticle

calorimeters
sensors
Sensors
Cryostats
cryostats

Crystallization of Diamond Using Energetic Ion Beam up to 400 keV

Ogura, M., Hasegawa, M., Tanaka, Y. & Kobayashi, N., 1999, In : New Diamond and Frontier Carbon Technology. 9, 2, p. 137-140 4 p.

Research output: Contribution to journalArticle

Diamond
Crystallization
Ion beams
Annealing
Semiconductor materials
6 Citations (Scopus)

Deposition of Ge1-xCx alloy on Si by combined low-energy ion beam and molecular beam epitaxial method

Shibata, H., Kimura, S., Fons, P., Yamada, A., Obara, A. & Kobayashi, N., 1999 Jun, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38, 6 A, p. 3459-3465 7 p.

Research output: Contribution to journalArticle

Molecular beams
Ion beams
molecular beams
ion beams
Ions
64 Citations (Scopus)

n-type control by sulfur ion implantation in homoepitaxial diamond films grown by chemical vapor deposition

Hasegawa, M., Takeuchi, D., Yamanaka, S., Ogura, M., Watanabe, H., Kobayashi, N., Okushi, H. & Kajimura, K., 1999, In : Japanese Journal of Applied Physics, Part 2: Letters. 38, 12 B

Research output: Contribution to journalArticle

Diamond films
diamond films
Ion implantation
ion implantation
Chemical vapor deposition
4 Citations (Scopus)

Relation between the substitutional fraction and electrical activation of carbon in heavily C-ion implanted GaAs

Kuriyama, K., Koyama, T., Kushida, K., Hayashi, N., Kobayashi, N. & Hasegawa, M., 1999 May 1, In : Journal of Applied Physics. 85, 9, p. 6926-6928 3 p.

Research output: Contribution to journalArticle

nuclear reactions
backscattering
activation
carbon
spectroscopy
4 Citations (Scopus)

Structural and electrical properties of beryllium implanted silicon carbide

Henkel, T., Tanaka, Y., Kobayashi, N., Tangue, H., Gong, M., Chen, X. D., Fung, S. & Beling, C. D., 1999, Materials Research Society Symposium - Proceedings. Materials Research Society, Vol. 572. p. 117-122 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Beryllium
Silicon carbide
Structural properties
Electric properties
Deep level transient spectroscopy
1998
5 Citations (Scopus)

Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties

Kakemoto, H., Katsumata, H., Takada, T., Tsai, Y. S., Hasegawa, M., Sakuragi, S., Kobayashi, N., Makita, Y., Tsukamoto, T. & Uekusa, S. I., 1998 Sep 30, In : Materials Science and Engineering A. 253, 1-2, p. 284-291 8 p.

Research output: Contribution to journalArticle

Ion implantation
ion implantation
Optical properties
Annealing
optical properties