• 926 Citations
  • 15 h-Index
1975 …2016
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Research Output 1975 2016

  • 926 Citations
  • 15 h-Index
  • 94 Article
  • 22 Conference contribution
  • 8 Chapter
  • 1 Comment/debate
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Chapter
2000

Beryllium implantation doping of silicon carbide

Henkel, T., Tanaka, Y., Kobayashi, N., Nishizawa, S. & Hishita, S., 2000, Materials Science Forum. Trans Tech Publ Ltd, Vol. 338.

Research output: Chapter in Book/Report/Conference proceedingChapter

Beryllium
Silicon carbide
Ion implantation
Doping (additives)
Graphite
1 Citation (Scopus)

Coimplantation effects of (C and Si)/Ga in 6H-SiC

Tanaka, Y., Kobayashi, N., Hasegawa, M., Ogura, M., Ishida, Y., Yoshida, S., Okumura, H. & Tanoue, H., 2000, Materials Science Forum. Trans Tech Publ Ltd, Vol. 338.

Research output: Chapter in Book/Report/Conference proceedingChapter

Gallium
Silicon
Chemical activation
Hall effect
Rutherford backscattering spectroscopy
7 Citations (Scopus)

Electrical and structural properties of Al and B implanted 4H-SiC

Tanaka, Y., Kobayashi, N., Okumura, H., Suzuki, R., Ohdaira, T., Hasegawa, M., Ogura, M., Yoshida, S. & Tanoue, H., 2000, Materials Science Forum. Trans Tech Publ Ltd, Vol. 338.

Research output: Chapter in Book/Report/Conference proceedingChapter

Positrons
Aluminum
Structural properties
Electric properties
Vacancies
1 Citation (Scopus)

Electrical characteristics and surface morphology for arsenic ion-implanted 4H-SiC at high temperature

Senzaki, J., Fukuda, K., Imai, S., Tanaka, Y., Kobayashi, N., Tanoue, H., Okushi, H. & Arai, K., 2000, Materials Science Forum. Trans Tech Publ Ltd, Vol. 338.

Research output: Chapter in Book/Report/Conference proceedingChapter

Arsenic
Surface morphology
Doping (additives)
Ions
Electron devices
15 Citations (Scopus)

Hot-implantation of phosphorus ions into 4H-SiC

Imai, S., Kobayashi, S., Shinohe, T., Fukuda, K., Tanaka, Y., Senzaki, J., Tanoue, H., Kobayashi, N. & Okushi, H., 2000, Materials Science Forum. Trans Tech Publ Ltd, Vol. 338.

Research output: Chapter in Book/Report/Conference proceedingChapter

Ion implantation
Phosphorus
Ions
Sheet resistance
Annealing
1 Citation (Scopus)

Secondary defect distribution in high energy ion implanted 4H-SiC

Ohno, T. & Kobayashi, N., 2000, Materials Science Forum. Trans Tech Publ Ltd, Vol. 338.

Research output: Chapter in Book/Report/Conference proceedingChapter

Ions
Defects
Secondary ion mass spectrometry
Doping (additives)
Transmission electron microscopy
1 Citation (Scopus)

Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching

Henkel, T., Ferro, G., Nishizawa, S., Pressler, H., Tanaka, Y., Tanoue, H. & Kobayashi, N., 2000, Materials Science Forum. Trans Tech Publ Ltd, Vol. 338.

Research output: Chapter in Book/Report/Conference proceedingChapter

Wet etching
Silicon carbide
Ion implantation
Etching
Rutherford backscattering spectroscopy
1977
4 Citations (Scopus)

ELECTRON ENERGY SPECTROMETER OF DOUBLE-STAGE RETARDING FIELD TYPE - 2. EXPERIMENTAL STUDY.

Hori, H., Kobayashi, N., Maeda, N. & Sakisaka, M., 1977 Sep, Jpn J Appl Phys. 9 ed. Vol. 16. p. 1513-1518 6 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Spectrometers
Electron energy analyzers
Atoms
Electrons
Ions