• 926 Citations
  • 15 h-Index
1975 …2016
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Research Output 1975 2016

  • 926 Citations
  • 15 h-Index
  • 94 Article
  • 22 Conference contribution
  • 8 Chapter
  • 1 Comment/debate
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Conference contribution
2000

Characterization of n-type layer by S + ion implantation in 4H-SiC

Tanaka, Y., Kobayashi, N., Okumura, H., Yoshida, S., Hasegawa, M., Ogura, M. & Tanoue, H., 2000, Materials Research Society Symposium - Proceedings. Shul, R. J., Ren, F., Pletschen, W. & Murakami, M. (eds.). Vol. 622.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ion implantation
Rutherford backscattering spectroscopy
Spectrometry
Photoluminescence
Activation energy

Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide

Senzaki, J., Fukuda, K., Ishida, Y., Tanaka, Y., Tanoue, H., Kobayashi, N., Tanaka, T. & Arai, K., 2000, Materials Research Society Symposium - Proceedings. Shul, R. J., Ren, F., Pletschen, W. & Murakami, M. (eds.). Vol. 622.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hall effect
Arsenic
Silicon carbide
Activation energy
Hall mobility
1 Citation (Scopus)

Structural properties of sulfur-implanted diamond single crystals

Hasegawa, M., Ogura, M., Takeuchi, D., Yamanaka, S., Watanabe, H., Ri, S. G., Kobayashi, N. & Okushi, H., 2000, Proceedings of the International Conference on Ion Implantation Technology. p. 773-776 4 p. 924268

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Diamond
Sulfur
Structural properties
Diamonds
sulfur
1 Citation (Scopus)

X-ray pulse-shape analysis on bridge-type microcalorimeters with Ti-Au transition-edge sensors

Ukibe, M., Tanaka, K., Hirayama, F., Mizuki, T., Hikosaka, T., Morooka, T., Chinone, K., Kawabe, U., Nemoto, T., Koyanagi, M., Ohkubo, M. & Kobayashi, N., 2000, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4140. p. 376-383 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

calorimeters
Calorimeters
X rays
SQUIDs
sensors
1999
4 Citations (Scopus)

Structural and electrical properties of beryllium implanted silicon carbide

Henkel, T., Tanaka, Y., Kobayashi, N., Tangue, H., Gong, M., Chen, X. D., Fung, S. & Beling, C. D., 1999, Materials Research Society Symposium - Proceedings. Materials Research Society, Vol. 572. p. 117-122 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Beryllium
Silicon carbide
Structural properties
Electric properties
Deep level transient spectroscopy
1997
8 Citations (Scopus)

Fabrication of p-β-Fe 1-xMn xSi 2/n-Si heterostructure diode and their electrical and optical properties

Takada, T., Katsumata, H., Makita, Y., Kobayashi, N., Hasegawa, M. & Uekusa, S., 1997, Materials Research Society Symposium - Proceedings. MRS, Vol. 478. p. 267-272 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Heterojunctions
Diodes
Electric properties
Optical properties
Fabrication

Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

Shibata, H., Kimura, S., Fons, P., Yamada, A., Makita, Y., Obara, A., Kobayashi, N., Takahashi, H., Katsumata, H., Tanabe, J. & Uekusa, S., 1997, Materials Research Society Symposium - Proceedings. Robertson, I. M., Was, G. S., Hobbs, L. W. & de la Rubia, T. D. (eds.). Materials Research Society, Vol. 439. p. 233-238 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Molecular beam epitaxy
Ion beams
Molecular beams
Lattice vibrations
Ion bombardment
1996

Annealing effect of Cd + ion-implanted liquid encapsulated Czochralski-GaAs

Kawasumi, Y., Makita, Y., Kimura, S., Iida, T., Kotani, M., Obara, A., Shibata, H., Kobayashi, N., Tsukamoto, T. & Kobayashi, E., 1996, Materials Research Society Symposium - Proceedings. Materials Research Society, Vol. 396. p. 841-846 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rapid thermal annealing
Furnaces
Annealing
Ions
Liquids
2 Citations (Scopus)

Electrical properties of β-FeSi2 bulk crystal grown by horizontal gradient freeze method

Shibata, H., Makita, Y., Kakemoto, H., Tsai, Y., Sakuragi, S., Katsumata, H., Obara, A., Kobayashi, N., Uekusa, S., Tsukamoto, T., Tsunoda, T. & Imai, Y., 1996, International Conference on Thermoelectrics, ICT, Proceedings. p. 62-66 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electric properties
Annealing
Crystals
Hole concentration
Hole mobility
4 Citations (Scopus)

Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy

Shibata, H., Makita, Y., Katsumata, H., Kimura, S., Kobayashi, N., Hasegawa, M., Hishita, S., Beye, A. C., Takahashi, H., Tanabe, J. & Uekusa, S., 1996, Materials Research Society Symposium - Proceedings. Materials Research Society, Vol. 402. p. 517-522 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicides
Silicon
Molecular beam epitaxy
Ion beams
Fabrication
2 Citations (Scopus)

Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

Shibata, H., Kimura, S., Fons, P., Yamada, A., Makita, Y., Obara, A., Kobayashi, N., Takahashi, H., Katsumata, H., Tanabe, J. & Uekusa, S., 1996, Materials Research Society Symposium - Proceedings. Alexander, D. E., Cheung, N. W., Park, B. & Skorupa, W. (eds.). Materials Research Society, Vol. 438. p. 393-398 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Molecular beam epitaxy
Ion beams
Molecular beams
Lattice vibrations
Ion bombardment
4 Citations (Scopus)

Growth of Si 1-xSn x layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG)

Kobayashi, N., Hasegawa, M., Hayashi, N., Katsumata, H., Makita, Y., Shibata, H. & Uekusa, S., 1996, Materials Research Society Symposium - Proceedings. Materials Research Society, Vol. 396. p. 207-212 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystallization
Epitaxial growth
Ion beams
Structural properties
Optical properties

High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs: formation of new shallow emission bands

Harada, K., Makita, Y., Shibata, H., Lo, B., Beye, A. C., Halsall, M. P., Kimura, S., Kobayashi, N., Iida, T., Shima, T. & Obara, A., 1996, Materials Research Society Symposium - Proceedings. Materials Research Society, Vol. 396. p. 835-840 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ion implantation
Hole concentration
Crystal growth from melt
Rapid thermal annealing
Liquids
1 Citation (Scopus)

Initial stages of reactions between monolayer Fe and Si(001) surfaces

Hasegawa, M., Kobayashi, N. & Hayashi, N., 1996, Materials Research Society Symposium - Proceedings. Materials Research Society, Vol. 402. p. 529-534 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Monolayers
Reflection high energy electron diffraction
Annealing
Ions
Substrates

Optical, electrical and structural properties of polycrystalline β-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon

Katsumata, H., Makita, Y., Takahashi, H., Shibata, H., Kobayashi, N., Hasegawa, M., Kimura, S., Obara, A., Tanabe, J. & Uekusa, S., 1996, International Conference on Thermoelectrics, ICT, Proceedings. p. 479-483 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Structural properties
Electron beams
Evaporation
Electric properties
Optical properties
3 Citations (Scopus)

Structural and optical properties of B-FeSi2 film prepared by laser ablation method and comparison of B-FeSi2 films prepared by three different methods

Kakemoto, H., Makita, Y., Katsumata, H., Iida, T., Stauter, C., Obara, A., Shibata, H., Tsai, Y. S., Sakuragi, S., Kobayashi, N., Hasegawa, M., Uekusa, S. I. & Tsukamoto, T., 1996, Proceedings of SPIE - The International Society for Optical Engineering. Deng, S-S. & Wang, S. C. (eds.). Vol. 2888. p. 32-43 12 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Laser ablation
laser ablation
Structural properties
Optical properties
optical properties
8 Citations (Scopus)

Structural properties of β-FeSi 2 bulk crystal grown by horizontal gradient freeze method

Kakemoto, H., Tsai, Y., Beye, A. C., Katsumata, H., Sakuragi, S., Makita, Y., Obara, A., Kobayashi, N., Shibata, H., Uekusa, S., Tsukamoto, T., Tsunoda, T. & Imai, Y., 1996, Materials Research Society Symposium - Proceedings. Materials Research Society, Vol. 402. p. 331-336 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Structural properties
Cooling
Crystals
Graphite
Boron nitride
1995
2 Citations (Scopus)

Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties

Kobayashi, N., Katsumata, H., Makita, Y., Hasegawa, M., Hayashi, N., Shibata, H., Uekusa, S. & Hishita, S., 1995, Materials Research Society Symposium - Proceedings. Materials Research Society, Vol. 388. p. 189-194 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystallization
Epitaxial growth
Ion implantation
Ion beams
Structural properties
1994
3 Citations (Scopus)

Formation of SiGe and SiGeC layers on Si by Ge and C ion implantation and subsequent ion-beam-induced epitaxial crystallization

Kobayashi, N., Hasegawa, M., Phillips, J. R., Hayashi, N., Tanoue, H., Shibata, H. & Makita, Y., 1994, Materials Research Society Symposium Proceedings. Garito, A. F., Jen, A. K-Y., Lee, C. Y-C. & Dalton, L. R. (eds.). Pittsburgh, PA, United States: Publ by Materials Research Society, Vol. 316. p. 771-776 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystallization
Ion implantation
Ion beams
Ions
Fabrication
6 Citations (Scopus)

Nano-structure Ge formed in thin film SiO2 using ion implantation

Phillips, J. R., Hellman, O. C., Kobayashi, N., Makita, Y., Shibata, H., Yamada, A., Fons, P., Tsai, Y., Niki, S., Hasegawa, M. & Iida, T., 1994, Materials Research Society Symposium Proceedings. Garito, A. F., Jen, A. K-Y., Lee, C. Y-C. & Dalton, L. R. (eds.). Pittsburgh, PA, United States: Publ by Materials Research Society, Vol. 316. p. 475-480 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ion implantation
Crystallites
Thin films
Annealing
Semiconductor materials
1985

ION IRRADIATION AND ANNEALING STUDIES OF NbC THIN FILMS.

Kobayashi, N., Kaufmann, R. & Linker, G., 1985, Unknown Host Publication Title. Amsterdam, Ne: North-Holland, p. 732-735 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ion bombardment
Lattice constants
Annealing
Recovery
Ions
1984
4 Citations (Scopus)

SUPERCONDUCTING TRANSITION TEMPERATURE AND STRUCTURE OF ION IRRADIATED NbC THIN FILMS.

Kobayashi, N., Kaufmann, R. & Linker, G., 1984, Unknown Host Publication Title. pt 1 ed. Amsterdam, Neth: North-Holland, p. 107-108 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Superconducting transition temperature
Lattice constants
Ions
Defect structures
Point defects