Toshihiro Kawano

次席研究員(研究院講師)

  • 630 Citations
  • 14 h-Index
1984 …2012

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Research Output

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Article
2011

Over 3.0 gw/cm2 figure-of-merit gan p-n junction diodes on free-standing gan substrates

Hatakeyama, Y., Nomoto, K., Kaneda, N., Kawano, T., Mishima, T. & Nakamura, T., 2011 Dec 1, In : IEEE Electron Device Letters. 32, 12, p. 1674-1676 3 p., 6042353.

Research output: Contribution to journalArticle

83 Citations (Scopus)
2001

Underwater laser welding by 4 kW CW YAG Laser

Yamashita, Y., Kawano, T. & Mann, K., 2001 Oct, In : Journal of Nuclear Science and Technology. 38, 10, p. 891-895 5 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)
1995

Damage in a gaas surface caused by rf-sputter deposition of s1o2

Mltanl, K. & Kawano, T., 1995 Sep, In : Japanese journal of applied physics. 34, 9R, p. 4649-4652 4 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Ultralow Threshold 1.3-μm InGaAsP–InP Compressive-Strained Multiquantum-Well Monolithic Laser Array for Parallel High-Density Optical Interconnects

Uomi, K., Tsuchiya, T., Komori, M., Oka, A., Kawano, T. & Oishi, A., 1995 Jun, In : IEEE Journal on Selected Topics in Quantum Electronics. 1, 2, p. 203-210 8 p.

Research output: Contribution to journalArticle

19 Citations (Scopus)

Ultralow Threshold and Uniform Operation (1.3 ± 0.09 rnA) in 1.3-µm Strained-MQW 10-Element Laser Arrays for Parallel High-Density Optical Interconnects

Uomi, K., Tsuchiya, T., Komori, M., Oka, A., Kawano, T. & Oishi, A., 1995 Jan, In : IEEE Photonics Technology Letters. 7, 1, p. 1-3 3 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)
1994

Dislocation reduction in InP layers grown on sawtooth-patterned GaAs substrates

Okuno, Y., Kawano, T., Koguchi, M., Nakamura, K. & Kakibayashi, H., 1994 Apr 1, In : Journal of Crystal Growth. 137, 3-4, p. 313-318 6 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)

Investigation of effect of strain on low-threshold 1.3μm InGaAsP strained-layer quantum well lasers

Tsuchiya, T., Komori, M., Uomi, K., Oka, A., Kawano, T. & Oishi, A., 1994 May 12, In : Electronics Letters. 30, 10, p. 788-789 2 p.

Research output: Contribution to journalArticle

23 Citations (Scopus)

New photonic device integration by selective‐area MOVPE and its application to optical modulator/laser integration (invited paper)

Aoki, M., Suzuki, M., Taniwatari, T., Sano, H. & Kawano, T., 1994 Feb 20, In : Microwave and Optical Technology Letters. 7, 3, p. 132-139 8 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Study of threading dislocation reduction by strained interlayer in InP layers grown on GaAs substrates

Okuno, Y. & Kawano, T., 1994 Dec 2, In : Journal of Crystal Growth. 145, 1-4, p. 338-344 7 p.

Research output: Contribution to journalArticle

10 Citations (Scopus)
1993

InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD

Aoki, M., Suzuki, M., Sano, H., Kawano, T., Ido, T., Taniwatari, T., Uomi, K. & Takai, A., 1993 Jun, In : IEEE Journal of Quantum Electronics. 29, 6, p. 2088-2096 9 p.

Research output: Contribution to journalArticle

162 Citations (Scopus)

In situ x-ray monitoring of metalorganic vapor phase epitaxy

Tsuchiya, T., Taniwatari, T., Uomi, K., Kawano, T. & Ono, Y., 1993 Oct, In : Japanese journal of applied physics. 32, 10 R, p. 4652-4655 4 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Low drive voltage and extremely low chirp integrated electroabsorption modulator/DFB laser for 2.5 Gbit/s 200 km normal fibre transmission

Aoki, M., Kikuchi, N., Sekine, K., Sasaki, S., Suzuki, M., Taniwatari, T., Okuno, Y., Takai, A. & Kawano, T., 1993 Oct, In : Electronics Letters. 29, 22, p. 1983-1984 2 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Threading dislocation reduction in inp on gaas by thin strained interlayer and its application to the fabrication of 1.3-μm-wavelength laser on gaas

Okuno, Y., Kawano, T., Tsuchiya, T. & Taniwatari, T., 1993 Jan, In : Japanese journal of applied physics. 32, 1 S, p. 614-617 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)
1992

Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy

Olego, D. J., Tamura, M., Okuno, Y., Kawano, T. & Hashimoto, A., 1992 Dec 1, In : Journal of Applied Physics. 71, 9, p. 4329-4332 4 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

High-Extinction-Ratio MQW Electroabsorption-Modulator Integrated DFB Laser Fabricated by In-Plane Bandgap Energy Control Technique

Aoki, M., Takahashi, M., Suzuki, M., Sano, H., Uomi, K., Kawano, T. & Takai, A., 1992 Jun, In : IEEE Photonics Technology Letters. 4, 6, p. 580-582 3 p.

Research output: Contribution to journalArticle

40 Citations (Scopus)

High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

Aoki, M., Suzuki, M., Takahashi, M., Sano, H., Ido, T., Kawano, T. & Takai, A., 1992 Jun 4, In : Electronics Letters. 28, 12, p. 1157-1158 2 p.

Research output: Contribution to journalArticle

53 Citations (Scopus)

Low-Threshold (3.2 mA per Element) 1.3 μm InGaAsP MQW Laser Array on a p-Type Substrate

Yamashita, S., Oka, A., Kawano, T., Tsuchiya, T., Saitoh, K., Uomi, K. & Ono, Y., 1992 Sep, In : IEEE Photonics Technology Letters. 4, 9, p. 954-957 4 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)

Structural and optoelectronic properties and their relationship with strain relaxation in heteroepitaxial InP layers grown on GaAs substrates

Olego, D. J., Okuno, Y., Kawano, T. & Tamura, M., 1992 Dec 1, In : Journal of Applied Physics. 71, 9, p. 4492-4501 10 p.

Research output: Contribution to journalArticle

31 Citations (Scopus)
1991

High-Power 780 Nm Algaas Quantum-Well Lasers and Their Reliable Operation

Yamashita, S., Nakatsuka, S. I., Uchida, K., Kawano, T. & Kajimura, T., 1991 Jan 1, In : IEEE Journal of Quantum Electronics. 27, 6, p. 1544-1549 6 p.

Research output: Contribution to journalArticle

15 Citations (Scopus)
1989

High-power operation of self-sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer

Tanaka, T., Kawano, T. & Kajimura, T., 1989 Nov, In : Japanese journal of applied physics. 28, 11 A, p. L2078-L2080

Research output: Contribution to journalArticle

1 Citation (Scopus)

Lasing wavelengths of index-guided aigalnp semiconductor lasers as functions of off-angle from (100) plane of gaas substrate

Tanaka, T., Minagawa, S., Kawano, T. & Kajimura, T., 1989 Jul 6, In : Electronics Letters. 25, 14, p. 905-907 3 p.

Research output: Contribution to journalArticle

24 Citations (Scopus)
1988

High-power operation in self-sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer

Tanaka, T., Kawano, T. & Kajimura, T., 1988 Dec 1, In : Applied Physics Letters. 53, 25, p. 2471-2473 3 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)
1987

Improved self-aligned structure for gaalas high-power lasers

Yoshizawa, M., Uomi, K., Ohishi, A., Ono, Y., Kawano, T., Nakashima, K. & Kajimura, T., 1987 Sep, In : Japanese journal of applied physics. 26, 9A, p. 1465-1467 3 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)
1984

High-power visible GaAlAs lasers with self-aligned strip buried heterostructure

Ohtoshi, T., Kawano, T., Sasaki, Y., Kajimura, T., Chinone, N. & Nakamura, M., 1984 Dec 1, In : Journal of Applied Physics. 56, 9, p. 2491-2496 6 p.

Research output: Contribution to journalArticle

10 Citations (Scopus)