• 5457 Citations
  • 37 h-Index
1984 …2019
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Fingerprint Dive into the research topics where Toshiki Makimoto is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 2 Similar Profiles
bipolar transistors Physics & Astronomy
heterojunctions Physics & Astronomy
Heterojunction bipolar transistors Engineering & Materials Science
Metallorganic vapor phase epitaxy Engineering & Materials Science
Substrates Engineering & Materials Science
Epitaxial growth Engineering & Materials Science
field effect transistors Physics & Astronomy
vapor phase epitaxy Physics & Astronomy

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Research Output 1984 2019

  • 5457 Citations
  • 37 h-Index
  • 174 Article
  • 23 Conference contribution
  • 7 Chapter

Si doping mechanism in Si doped GaAsN

Tsukasaki, T., Hiyoshi, R., Fujita, M. & Makimoto, T., 2019 May 15, In : Journal of Crystal Growth. 514, p. 45-48 4 p.

Research output: Contribution to journalArticle

Hall effect
Growth temperature
Molecular beam epitaxy
Nitrides
Nitrogen

Hole conduction characteristics of cubic Ti1−xAlxN

Yoshikawa, M., Toyama, D., Fujita, T., Nagatomo, N. & Makimoto, T., 2018 Jan 1, (Accepted/In press) In : Thin Solid Films.

Research output: Contribution to journalArticle

conduction
radio frequencies
temperature dependence
ion plating
hole mobility
2 Citations (Scopus)

A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate

Makimoto, T., Kumakura, K., Maeda, M., Yamamoto, H. & Horikoshi, Y., 2015 Jul 28, In : Journal of Crystal Growth. 425, p. 138-140 3 p.

Research output: Contribution to journalArticle

Aluminum Oxide
Buffer layers
Molecular beam epitaxy
Sapphire
sapphire
2 Citations (Scopus)

Effects of surface barrier layer in AlGaAs/GaAs solar cells

Urabe, H., Kuramoto, M., Nakano, T., Kawaharazuka, A., Makimoto, T. & Horikoshi, Y., 2015 Jun 20, In : Journal of Crystal Growth. 425, p. 330-332 3 p.

Research output: Contribution to journalArticle

barrier layers
aluminum gallium arsenides
Solar cells
solar cells
Quantum efficiency

Erratum: Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN (Applied Physics Letters (2014) 105 (193509))

Hiroki, M., Kumakura, K., Kobayashi, Y., Akasaka, T., Makimoto, T. & Yamamoto, H., 2015 Jan 26, In : Applied Physics Letters. 106, 4, 049903.

Research output: Contribution to journalArticle