• 5649 Citations
  • 38 h-Index
1984 …2019

Research output per year

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Fingerprint Dive into the research topics where Toshiki Makimoto is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

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Research Output

Si doping mechanism in Si doped GaAsN

Tsukasaki, T., Hiyoshi, R., Fujita, M. & Makimoto, T., 2019 May 15, In : Journal of Crystal Growth. 514, p. 45-48 4 p.

Research output: Contribution to journalArticle

  • Hole conduction characteristics of cubic Ti1−xAlxN

    Yoshikawa, M., Toyama, D., Fujita, T., Nagatomo, N. & Makimoto, T., 2018 Jan 1, (Accepted/In press) In : Thin Solid Films.

    Research output: Contribution to journalArticle

  • A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate

    Makimoto, T., Kumakura, K., Maeda, M., Yamamoto, H. & Horikoshi, Y., 2015 Jul 28, In : Journal of Crystal Growth. 425, p. 138-140 3 p.

    Research output: Contribution to journalArticle

  • 2 Citations (Scopus)

    Effects of surface barrier layer in AlGaAs/GaAs solar cells

    Urabe, H., Kuramoto, M., Nakano, T., Kawaharazuka, A., Makimoto, T. & Horikoshi, Y., 2015 Jun 20, In : Journal of Crystal Growth. 425, p. 330-332 3 p.

    Research output: Contribution to journalArticle

  • 4 Citations (Scopus)

    Erratum: Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN (Applied Physics Letters (2014) 105 (193509))

    Hiroki, M., Kumakura, K., Kobayashi, Y., Akasaka, T., Makimoto, T. & Yamamoto, H., 2015 Jan 26, In : Applied Physics Letters. 106, 4, 049903.

    Research output: Contribution to journalComment/debate