Engineering & Materials Science
Metallorganic vapor phase epitaxy
94%
Heterojunction bipolar transistors
71%
Photoluminescence
66%
Substrates
65%
Epitaxial growth
61%
Doping (additives)
49%
Metallorganic chemical vapor deposition
45%
Molecular beam epitaxy
43%
Semiconductor quantum wells
40%
Nitrides
39%
Sapphire
38%
High electron mobility transistors
37%
Nitrogen
36%
Hole concentration
36%
Excitons
35%
Heterojunctions
34%
Atoms
34%
Temperature
33%
Buffer layers
33%
Modulation
31%
Boron nitride
29%
Aluminum oxide
27%
Diamonds
27%
Growth temperature
27%
Electrons
25%
Thin films
24%
Flow rate
24%
Field effect transistors
24%
Two dimensional electron gas
24%
Superlattices
22%
Scanning tunneling microscopy
21%
Semiconductor materials
21%
Leakage currents
20%
Diodes
20%
Atomic layer epitaxy
18%
Luminescence
18%
Diamond films
17%
Carrier concentration
17%
Light emitting diodes
16%
Energy gap
16%
Drain current
15%
Impurities
15%
Valence bands
14%
Current voltage characteristics
14%
Contact resistance
14%
Electric breakdown
14%
Transconductance
13%
Electric potential
13%
Chemical analysis
13%
Conduction bands
13%
Physics & Astronomy
bipolar transistors
100%
heterojunctions
81%
epitaxy
54%
vapor phase epitaxy
47%
photoluminescence
41%
nitrogen
40%
aluminum gallium arsenides
39%
flow velocity
38%
modulation
37%
emitters
36%
field effect transistors
35%
quantum wells
34%
electric potential
28%
accumulators
28%
diodes
28%
excitons
27%
molecular beam epitaxy
26%
metalorganic chemical vapor deposition
25%
conduction
23%
MIS (semiconductors)
23%
buffers
23%
high current
22%
sapphire
21%
scanning tunneling microscopy
21%
electrical faults
19%
leakage
18%
nitrogen atoms
18%
room temperature
18%
carbon
17%
thin films
17%
nitrides
17%
boron nitrides
15%
low resistance
15%
diamonds
14%
temperature
14%
electrons
14%
photoabsorption
13%
barrier layers
13%
electric fields
13%
contact resistance
13%
insulators
12%
atoms
12%
superlattices
12%
passivity
12%
impurities
11%
capacitance-voltage characteristics
10%
transconductance
10%
luminescence
10%
electron mobility
10%
temperature dependence
10%
Chemical Compounds
Current Gain
39%
Metallorganic Chemical Vapour Deposition
26%
Molecular Beam Epitaxy
25%
Field Effect
24%
Hole Concentration
21%
Diamond
21%
Nitride
19%
Photoluminescence
19%
Boron Nitride
13%
Ambient Reaction Temperature
13%
Nitrogen
12%
Leakage Current
12%
Valence Band
11%
Liquid Film
11%
Electron Particle
10%
Surface
10%
Buffer Solution
9%
Fluorescence Maxima
9%
Threading Dislocation
9%
Scanning Tunneling Microscopy
9%
Hexagonal Space Group
8%
Electron Mobility
8%
Atomic Layer Epitaxy
7%
Metalorganic Molecular Beam Epitaxy
7%
Flow Kinetics
7%
Length
7%
Conduction Band
7%
Electron Beam Induced Current
7%
Drain Current
6%
Contact Resistance
6%
Epitaxial Film
6%
Polycrystalline Solid
6%
Migration-Enhanced Epitaxy
6%
Electron Cyclotron Resonance
6%
Dissipation
6%
Voltage
6%
Nonconductor
6%
Energy
6%
Hole Mobility
6%
Compound Mobility
6%
Transconductance
6%
Chemical Vapour Deposition
5%
Annealing
5%
Etching
5%
Solar Cell
5%
Donor
5%