• 6475 Citations
  • 40 h-Index
1986 …2019
If you made any changes in Pure these will be visible here soon.

Fingerprint Fingerprint is based on mining the text of the person's scientific documents to create an index of weighted terms, which defines the key subjects of each individual researcher.

  • 5 Similar Profiles
Switches Engineering & Materials Science
switches Physics & Astronomy
Solid electrolytes Engineering & Materials Science
Scanning tunneling microscopy Engineering & Materials Science
microscopes Physics & Astronomy
scanning tunneling microscopy Physics & Astronomy
Atoms Engineering & Materials Science
Metals Chemical Compounds

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Research Output 1986 2019

  • 6475 Citations
  • 40 h-Index
  • 120 Article
  • 19 Conference contribution
  • 3 Chapter

Resistivity control by the electrochemical removal of dopant atoms from a nanodot

Hiraya, W., Mishima, N., Shima, T., Tai, S., Tsuruoka, T., Valov, I. & Hasegawa, T., 2019 Jan 1, In : Faraday Discussions. 213, p. 29-40 12 p.

Research output: Contribution to journalArticle

Doping (additives)
electrical resistivity
Ion implantation

Time-Dependent Operations in Molecular Gap Atomic Switches

Suzuki, A., Tsuruoka, T. & Hasegawa, T., 2019 Jan 1, In : Physica Status Solidi (B) Basic Research. 1900068.

Research output: Contribution to journalArticle

plastic properties
1 Citation (Scopus)

Development of a molecular gap-type atomic switch and its stochastic operation

Arima, C., Suzuki, A., Kassai, A., Tsuruoka, T. & Hasegawa, T., 2018 Oct 21, In : Journal of Applied Physics. 124, 15, 152114.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots

Nayak, A., Unayama, S., Tai, S., Tsuruoka, T., Waser, R., Aono, M., Valov, I. & Hasegawa, T., 2018 Feb 8, In : Advanced Materials. 30, 6, 1703261.

Research output: Contribution to journalArticle

Solid electrolytes
Doping (additives)

Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

Wang, Q., Itoh, Y., Tsuruoka, T., Aono, M., He, D. & Hasegawa, T., 2018 Dec 15, In : Solid State Ionics. 328, p. 30-34 5 p.

Research output: Contribution to journalArticle

Oxygen vacancies
Leakage currents
Random access storage