Abstract
We have studied the energy band structure and the Γ-X carrier transfer mechanism for type II tunneling bi-quantum wells consisting of GaAs wells, AlGaAs barriers of different thicknesses, and AlAs layers by cw and time-resolved photoluminescence measurements. The cw photoluminescence spectra of the indirect recombination of X electrons in the 7.1 nm thick AlAs layers with Γ holes in the 2.8 nm thick GaAs wells show weak zero-phonon lines indicating that the AlAs confined states at Xxy are lower than those at Yz. Time-resolved photoluminescence reveals that the carrier transfer time depends stronger on temperature for thicker AlGaAs barriers. Two scattering mechanisms, temperature-dependent phonon scattering and the temperature-independent interface scattering, are probably involved in the carrier transfer, the latter becoming smaller with increasing AlGaAs barrier thickness. Our results are compared with those obtained for similar type II GaAs/AlAs superlattices.
| Original language | English |
|---|---|
| Pages (from-to) | 809-812 |
| Number of pages | 4 |
| Journal | Solid State Electronics |
| Volume | 37 |
| Issue number | 4-6 |
| DOIs | |
| Publication status | Published - 1994 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Γ-X electron transfer in type II tunneling bi-quantum wells. / Tackeuchi, Atsushi; Strauß, Uwe; Rühle, Wolfgang W.; Inata, Tsuguo; Muto, Shunichi.
In: Solid State Electronics, Vol. 37, No. 4-6, 1994, p. 809-812.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Γ-X electron transfer in type II tunneling bi-quantum wells
AU - Tackeuchi, Atsushi
AU - Strauß, Uwe
AU - Rühle, Wolfgang W.
AU - Inata, Tsuguo
AU - Muto, Shunichi
PY - 1994
Y1 - 1994
N2 - We have studied the energy band structure and the Γ-X carrier transfer mechanism for type II tunneling bi-quantum wells consisting of GaAs wells, AlGaAs barriers of different thicknesses, and AlAs layers by cw and time-resolved photoluminescence measurements. The cw photoluminescence spectra of the indirect recombination of X electrons in the 7.1 nm thick AlAs layers with Γ holes in the 2.8 nm thick GaAs wells show weak zero-phonon lines indicating that the AlAs confined states at Xxy are lower than those at Yz. Time-resolved photoluminescence reveals that the carrier transfer time depends stronger on temperature for thicker AlGaAs barriers. Two scattering mechanisms, temperature-dependent phonon scattering and the temperature-independent interface scattering, are probably involved in the carrier transfer, the latter becoming smaller with increasing AlGaAs barrier thickness. Our results are compared with those obtained for similar type II GaAs/AlAs superlattices.
AB - We have studied the energy band structure and the Γ-X carrier transfer mechanism for type II tunneling bi-quantum wells consisting of GaAs wells, AlGaAs barriers of different thicknesses, and AlAs layers by cw and time-resolved photoluminescence measurements. The cw photoluminescence spectra of the indirect recombination of X electrons in the 7.1 nm thick AlAs layers with Γ holes in the 2.8 nm thick GaAs wells show weak zero-phonon lines indicating that the AlAs confined states at Xxy are lower than those at Yz. Time-resolved photoluminescence reveals that the carrier transfer time depends stronger on temperature for thicker AlGaAs barriers. Two scattering mechanisms, temperature-dependent phonon scattering and the temperature-independent interface scattering, are probably involved in the carrier transfer, the latter becoming smaller with increasing AlGaAs barrier thickness. Our results are compared with those obtained for similar type II GaAs/AlAs superlattices.
UR - http://www.scopus.com/inward/record.url?scp=0028408942&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0028408942&partnerID=8YFLogxK
U2 - 10.1016/0038-1101(94)90303-4
DO - 10.1016/0038-1101(94)90303-4
M3 - Article
AN - SCOPUS:0028408942
VL - 37
SP - 809
EP - 812
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 4-6
ER -