Γ-X electron transfer in type II tunneling bi-quantum wells

Atsushi Tackeuchi; Uwe Strauß; Wolfgang W. Rühle; Tsuguo Inata; Shunichi Muto

doi:10.1016/0038-1101(94)90303-4

Γ-X electron transfer in type II tunneling bi-quantum wells

Atsushi Tackeuchi, Uwe Strauß, Wolfgang W. Rühle, Tsuguo Inata, Shunichi Muto

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have studied the energy band structure and the Γ-X carrier transfer mechanism for type II tunneling bi-quantum wells consisting of GaAs wells, AlGaAs barriers of different thicknesses, and AlAs layers by cw and time-resolved photoluminescence measurements. The cw photoluminescence spectra of the indirect recombination of X electrons in the 7.1 nm thick AlAs layers with Γ holes in the 2.8 nm thick GaAs wells show weak zero-phonon lines indicating that the AlAs confined states at X_xy are lower than those at Y_z. Time-resolved photoluminescence reveals that the carrier transfer time depends stronger on temperature for thicker AlGaAs barriers. Two scattering mechanisms, temperature-dependent phonon scattering and the temperature-independent interface scattering, are probably involved in the carrier transfer, the latter becoming smaller with increasing AlGaAs barrier thickness. Our results are compared with those obtained for similar type II GaAs/AlAs superlattices.

Original language	English
Pages (from-to)	809-812
Number of pages	4
Journal	Solid State Electronics
Volume	37
Issue number	4-6
DOIs	https://doi.org/10.1016/0038-1101(94)90303-4
Publication status	Published - 1994 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Γ-X electron transfer in type II tunneling bi-quantum wells",

abstract = "We have studied the energy band structure and the Γ-X carrier transfer mechanism for type II tunneling bi-quantum wells consisting of GaAs wells, AlGaAs barriers of different thicknesses, and AlAs layers by cw and time-resolved photoluminescence measurements. The cw photoluminescence spectra of the indirect recombination of X electrons in the 7.1 nm thick AlAs layers with Γ holes in the 2.8 nm thick GaAs wells show weak zero-phonon lines indicating that the AlAs confined states at Xxy are lower than those at Yz. Time-resolved photoluminescence reveals that the carrier transfer time depends stronger on temperature for thicker AlGaAs barriers. Two scattering mechanisms, temperature-dependent phonon scattering and the temperature-independent interface scattering, are probably involved in the carrier transfer, the latter becoming smaller with increasing AlGaAs barrier thickness. Our results are compared with those obtained for similar type II GaAs/AlAs superlattices.",

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AU - Tackeuchi, Atsushi

AU - Strauß, Uwe

AU - Rühle, Wolfgang W.

AU - Inata, Tsuguo

AU - Muto, Shunichi

PY - 1994/1/1

Y1 - 1994/1/1

N2 - We have studied the energy band structure and the Γ-X carrier transfer mechanism for type II tunneling bi-quantum wells consisting of GaAs wells, AlGaAs barriers of different thicknesses, and AlAs layers by cw and time-resolved photoluminescence measurements. The cw photoluminescence spectra of the indirect recombination of X electrons in the 7.1 nm thick AlAs layers with Γ holes in the 2.8 nm thick GaAs wells show weak zero-phonon lines indicating that the AlAs confined states at Xxy are lower than those at Yz. Time-resolved photoluminescence reveals that the carrier transfer time depends stronger on temperature for thicker AlGaAs barriers. Two scattering mechanisms, temperature-dependent phonon scattering and the temperature-independent interface scattering, are probably involved in the carrier transfer, the latter becoming smaller with increasing AlGaAs barrier thickness. Our results are compared with those obtained for similar type II GaAs/AlAs superlattices.

AB - We have studied the energy band structure and the Γ-X carrier transfer mechanism for type II tunneling bi-quantum wells consisting of GaAs wells, AlGaAs barriers of different thicknesses, and AlAs layers by cw and time-resolved photoluminescence measurements. The cw photoluminescence spectra of the indirect recombination of X electrons in the 7.1 nm thick AlAs layers with Γ holes in the 2.8 nm thick GaAs wells show weak zero-phonon lines indicating that the AlAs confined states at Xxy are lower than those at Yz. Time-resolved photoluminescence reveals that the carrier transfer time depends stronger on temperature for thicker AlGaAs barriers. Two scattering mechanisms, temperature-dependent phonon scattering and the temperature-independent interface scattering, are probably involved in the carrier transfer, the latter becoming smaller with increasing AlGaAs barrier thickness. Our results are compared with those obtained for similar type II GaAs/AlAs superlattices.

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Γ-X electron transfer in type II tunneling bi-quantum wells

Abstract

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