λ/4-shifted InGaAsP/InP DFB lasers by simultaneous holographic exposure of positive and negative photoresists

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

λ/4-shifted InGaAsP/lnP DFB lasers were fabricated by a novel method, that is, simultaneous holographic exposure of positive and negative photoresists. The λ/4-phase-shift in the first-order corrugations formed on an InP substrate was confirmed through SEM views and diffracted beam patterns. A strong resonance peak below the threshold and singlewavelength operation above it at the Bragg wavelength were observed.

Original languageEnglish
Pages (from-to)1008-1010
Number of pages3
JournalElectronics Letters
Volume20
Issue number24
DOIs
Publication statusPublished - 1984 Nov 22
Externally publishedYes

Keywords

  • Lasers and laser applications
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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