λ/4-shifted InGaAsP/lnP DFB lasers were fabricated by a novel method, that is, simultaneous holographic exposure of positive and negative photoresists. The λ/4-phase-shift in the first-order corrugations formed on an InP substrate was confirmed through SEM views and diffracted beam patterns. A strong resonance peak below the threshold and singlewavelength operation above it at the Bragg wavelength were observed.
- Lasers and laser applications
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering