0.1-μm gate-length superconducting FET

T. Nishino, M. Hatano, H. Hasegawa, F. Murai, T. Kure, A. Hiraiwa, K. Yagi, Ushio Kawabe

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Abstract

A superconducting field-effect transistor (FET) with a 0.1-μm-length gate electrode was fabricated and tested at liquid-helium temperature. Two superconducting electrodes (source and drain) were formed on the same Si substrate surface with an oxide-insulated gate electrode by a self-aligned fabrication process. Superconducting current flowing through the semiconductor (Si) between the two superconducting electrodes (Nb) was controlled by a gate-bias voltage.

Original languageEnglish
Pages (from-to)61-63
Number of pages3
JournalElectron device letters
Volume10
Issue number2
Publication statusPublished - 1989 Feb
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Nishino, T., Hatano, M., Hasegawa, H., Murai, F., Kure, T., Hiraiwa, A., Yagi, K., & Kawabe, U. (1989). 0.1-μm gate-length superconducting FET. Electron device letters, 10(2), 61-63.