We have developed the novel 0.15μm CMOS processes for high performance and high reliability, consisting of mixing the CoSi2/Si interface using Si+ implantation to form shallow junctions, nitrogen implantation into gate electrodes to improve the oxide reliability, and selective channel implantation using a gate-around mask to reduce the junction capacitance. By using those processes, the propagation delay time of 21 psec/stage was obtained for 0.15μm CMOS ring oscillator at the allowable maximum supply voltage of 2.0 V limited by hot-carrier degradation.
|Number of pages||4|
|Publication status||Published - 1994|
ASJC Scopus subject areas
- Electrical and Electronic Engineering