0.98μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

M. Usami, Yuichi Matsushima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Improvement of internal quantum efficiency and threshold current density was demonstrated by introducing GaAs/InGaP superlattice optical confinement layer (SL-OCL) into InGaAs/InGaP strained QW lasers. Carrier confinement due to the multiple quantum barrier (MQB) effect in addition to the graded index effect in the SL-OCL was also discussed.

Original languageEnglish
Title of host publicationConference Digest - IEEE International Semiconductor Laser Conference
PublisherIEEE
Pages137-138
Number of pages2
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA
Duration: 1994 Sep 191994 Sep 23

Other

OtherProceedings of the 1994 14th International Semiconductor Laser Conference
CityMaui, HI, USA
Period94/9/1994/9/23

Fingerprint

Threshold current density
Quantum well lasers
quantum well lasers
Quantum efficiency
Lasers
threshold currents
quantum efficiency
current density
lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Usami, M., & Matsushima, Y. (1994). 0.98μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 137-138). IEEE.

0.98μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer. / Usami, M.; Matsushima, Yuichi.

Conference Digest - IEEE International Semiconductor Laser Conference. IEEE, 1994. p. 137-138.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Usami, M & Matsushima, Y 1994, 0.98μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer. in Conference Digest - IEEE International Semiconductor Laser Conference. IEEE, pp. 137-138, Proceedings of the 1994 14th International Semiconductor Laser Conference, Maui, HI, USA, 94/9/19.
Usami M, Matsushima Y. 0.98μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer. In Conference Digest - IEEE International Semiconductor Laser Conference. IEEE. 1994. p. 137-138
Usami, M. ; Matsushima, Yuichi. / 0.98μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer. Conference Digest - IEEE International Semiconductor Laser Conference. IEEE, 1994. pp. 137-138
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abstract = "Improvement of internal quantum efficiency and threshold current density was demonstrated by introducing GaAs/InGaP superlattice optical confinement layer (SL-OCL) into InGaAs/InGaP strained QW lasers. Carrier confinement due to the multiple quantum barrier (MQB) effect in addition to the graded index effect in the SL-OCL was also discussed.",
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