Abstract
Improvement of internal quantum efficiency and threshold current density was demonstrated by introducing GaAs/InGaP superlattice optical confinement layer (SL-OCL) into InGaAs/InGaP strained QW lasers. Carrier confinement due to the multiple quantum barrier (MQB) effect in addition to the graded index effect in the SL-OCL was also discussed.
| Original language | English |
|---|---|
| Title of host publication | Conference Digest - IEEE International Semiconductor Laser Conference |
| Publisher | IEEE |
| Pages | 137-138 |
| Number of pages | 2 |
| Publication status | Published - 1994 |
| Externally published | Yes |
| Event | Proceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA Duration: 1994 Sep 19 → 1994 Sep 23 |
Other
| Other | Proceedings of the 1994 14th International Semiconductor Laser Conference |
|---|---|
| City | Maui, HI, USA |
| Period | 94/9/19 → 94/9/23 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Usami, M., & Matsushima, Y. (1994). 0.98μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 137-138). IEEE.