0.98μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

M. Usami; Yuichi Matsushima

0.98μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

M. Usami, Yuichi Matsushima

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Improvement of internal quantum efficiency and threshold current density was demonstrated by introducing GaAs/InGaP superlattice optical confinement layer (SL-OCL) into InGaAs/InGaP strained QW lasers. Carrier confinement due to the multiple quantum barrier (MQB) effect in addition to the graded index effect in the SL-OCL was also discussed.

Original language	English
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Publisher	IEEE
Pages	137-138
Number of pages	2
Publication status	Published - 1994
Externally published	Yes
Event	Proceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA Duration: 1994 Sep 19 → 1994 Sep 23

Other

Other	Proceedings of the 1994 14th International Semiconductor Laser Conference
City	Maui, HI, USA
Period	94/9/19 → 94/9/23

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

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@inproceedings{5e83df70c99f484a83c1644b77286299,

title = "0.98μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer",

abstract = "Improvement of internal quantum efficiency and threshold current density was demonstrated by introducing GaAs/InGaP superlattice optical confinement layer (SL-OCL) into InGaAs/InGaP strained QW lasers. Carrier confinement due to the multiple quantum barrier (MQB) effect in addition to the graded index effect in the SL-OCL was also discussed.",

author = "M. Usami and Yuichi Matsushima",

year = "1994",

language = "English",

pages = "137--138",

booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "IEEE",

note = "Proceedings of the 1994 14th International Semiconductor Laser Conference ; Conference date: 19-09-1994 Through 23-09-1994",

}

TY - GEN

T1 - 0.98μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

AU - Usami, M.

AU - Matsushima, Yuichi

PY - 1994

Y1 - 1994

N2 - Improvement of internal quantum efficiency and threshold current density was demonstrated by introducing GaAs/InGaP superlattice optical confinement layer (SL-OCL) into InGaAs/InGaP strained QW lasers. Carrier confinement due to the multiple quantum barrier (MQB) effect in addition to the graded index effect in the SL-OCL was also discussed.

AB - Improvement of internal quantum efficiency and threshold current density was demonstrated by introducing GaAs/InGaP superlattice optical confinement layer (SL-OCL) into InGaAs/InGaP strained QW lasers. Carrier confinement due to the multiple quantum barrier (MQB) effect in addition to the graded index effect in the SL-OCL was also discussed.

UR - http://www.scopus.com/inward/record.url?scp=0028700024&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028700024&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028700024

SP - 137

EP - 138

BT - Conference Digest - IEEE International Semiconductor Laser Conference

PB - IEEE

T2 - Proceedings of the 1994 14th International Semiconductor Laser Conference

Y2 - 19 September 1994 through 23 September 1994

ER -

0.98μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

Abstract

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ASJC Scopus subject areas

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