Abstract
Improvement of internal quantum efficiency and threshold current density was demonstrated by introducing GaAs/InGaP superlattice optical confinement layer (SL-OCL) into InGaAs/InGaP strained QW lasers. Carrier confinement due to the multiple quantum barrier (MQB) effect in addition to the graded index effect in the SL-OCL was also discussed.
Original language | English |
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Title of host publication | Conference Digest - IEEE International Semiconductor Laser Conference |
Publisher | IEEE |
Pages | 137-138 |
Number of pages | 2 |
Publication status | Published - 1994 |
Externally published | Yes |
Event | Proceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA Duration: 1994 Sep 19 → 1994 Sep 23 |
Other
Other | Proceedings of the 1994 14th International Semiconductor Laser Conference |
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City | Maui, HI, USA |
Period | 94/9/19 → 94/9/23 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics