0.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer

M. Usami, Yuichi Matsushima, Y. Takahashi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have proposed a GaAs-InGaP superlattice optical confinement layer (SL-OCL), which replaces graded InGaAsP alloy layers in 0.98-μm InGaAs-InGaP graded-index separate-confinement-heterostructure (GRINSCH) strained quantum-well (QW) lasers. Theoretical study of the multiquantum barrier (MQB) effect of the GaAs-InGaP SL indicates that electrons in the GaAs OCL feel more than two times higher barrier height than the classical bulk barrier height. Actually, the increase of internal quantum efficiency and the decrease of threshold current density were confirmed. Furthermore, the extremely high characteristic temperature T0 of 300 K around RT was obtained. These improvements of laser characteristics, especially high T0, is mainly owing to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL.

Original languageEnglish
Pages (from-to)244-249
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume1
Issue number2
DOIs
Publication statusPublished - 1995 Jun
Externally publishedYes

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Threshold current density
Quantum well lasers
quantum well lasers
Quantum efficiency
Heterojunctions
Electrons
Lasers
Temperature
threshold currents
quantum efficiency
current density
augmentation
lasers
electrons
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

0.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer. / Usami, M.; Matsushima, Yuichi; Takahashi, Y.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 1, No. 2, 06.1995, p. 244-249.

Research output: Contribution to journalArticle

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