1 V 46 ns 16 Mb SOI-DRAM with body control technique

Ken'ichi Shimomura, Hiroki Shimano, Fumihiro Okuda, Narumi Sakashita, Yasuo Yamaguchi, Toshiyuki Oashi, Takahisa Eimori, Masahide Inuishi, Kazutami Arimoto, Shigeto Maegawa, Yasuo Inoue, Tadashi Nishimura, Shinji Komori, Kazuo Kyuma, Akihiko Yasuoka, Haruhiko Abe

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Silicon on insulator (SOI) technology is used to fabricate a dynamic random access memory (DRAM) capable of low voltage operation. The device uses a body-pulsed sense amplifier and a body-driven equalizer to accelerate low-voltage speed while partially-depleted and fully depleted transistors are used to enhance on-state current. The device's performance is evaluated experimentally.

Original languageEnglish
Pages (from-to)68-69
Number of pages2
JournalUnknown Journal
Volume40
Publication statusPublished - 1997 Feb
Externally publishedYes

Fingerprint

random access memory
low voltage
insulators
Silicon on insulator technology
Data storage equipment
Silicon
Electric potential
silicon
Equalizers
Transistors
transistors
amplifiers

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Shimomura, K., Shimano, H., Okuda, F., Sakashita, N., Yamaguchi, Y., Oashi, T., ... Abe, H. (1997). 1 V 46 ns 16 Mb SOI-DRAM with body control technique. Unknown Journal, 40, 68-69.

1 V 46 ns 16 Mb SOI-DRAM with body control technique. / Shimomura, Ken'ichi; Shimano, Hiroki; Okuda, Fumihiro; Sakashita, Narumi; Yamaguchi, Yasuo; Oashi, Toshiyuki; Eimori, Takahisa; Inuishi, Masahide; Arimoto, Kazutami; Maegawa, Shigeto; Inoue, Yasuo; Nishimura, Tadashi; Komori, Shinji; Kyuma, Kazuo; Yasuoka, Akihiko; Abe, Haruhiko.

In: Unknown Journal, Vol. 40, 02.1997, p. 68-69.

Research output: Contribution to journalArticle

Shimomura, K, Shimano, H, Okuda, F, Sakashita, N, Yamaguchi, Y, Oashi, T, Eimori, T, Inuishi, M, Arimoto, K, Maegawa, S, Inoue, Y, Nishimura, T, Komori, S, Kyuma, K, Yasuoka, A & Abe, H 1997, '1 V 46 ns 16 Mb SOI-DRAM with body control technique', Unknown Journal, vol. 40, pp. 68-69.
Shimomura K, Shimano H, Okuda F, Sakashita N, Yamaguchi Y, Oashi T et al. 1 V 46 ns 16 Mb SOI-DRAM with body control technique. Unknown Journal. 1997 Feb;40:68-69.
Shimomura, Ken'ichi ; Shimano, Hiroki ; Okuda, Fumihiro ; Sakashita, Narumi ; Yamaguchi, Yasuo ; Oashi, Toshiyuki ; Eimori, Takahisa ; Inuishi, Masahide ; Arimoto, Kazutami ; Maegawa, Shigeto ; Inoue, Yasuo ; Nishimura, Tadashi ; Komori, Shinji ; Kyuma, Kazuo ; Yasuoka, Akihiko ; Abe, Haruhiko. / 1 V 46 ns 16 Mb SOI-DRAM with body control technique. In: Unknown Journal. 1997 ; Vol. 40. pp. 68-69.
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AU - Okuda, Fumihiro

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AU - Yamaguchi, Yasuo

AU - Oashi, Toshiyuki

AU - Eimori, Takahisa

AU - Inuishi, Masahide

AU - Arimoto, Kazutami

AU - Maegawa, Shigeto

AU - Inoue, Yasuo

AU - Nishimura, Tadashi

AU - Komori, Shinji

AU - Kyuma, Kazuo

AU - Yasuoka, Akihiko

AU - Abe, Haruhiko

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