1 V 46 ns 16 Mb SOI-DRAM with body control technique

Ken'ichi Shimomura, Hiroki Shimano, Fumihiro Okuda, Narumi Sakashita, Yasuo Yamaguchi, Toshiyuki Oashi, Takahisa Eimori, Masahide Inuishi, Kazutami Arimoto, Shigeto Maegawa, Yasuo Inoue, Tadashi Nishimura, Shinji Komori, Kazuo Kyuma, Akihiko Yasuoka, Haruhiko Abe

Research output: Contribution to journalConference article

14 Citations (Scopus)

Abstract

Silicon on insulator (SOI) technology is used to fabricate a dynamic random access memory (DRAM) capable of low voltage operation. The device uses a body-pulsed sense amplifier and a body-driven equalizer to accelerate low-voltage speed while partially-depleted and fully depleted transistors are used to enhance on-state current. The device's performance is evaluated experimentally.

Original languageEnglish
Pages (from-to)68-69
Number of pages2
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume40
Publication statusPublished - 1997 Feb 1
EventProceedings of the 1997 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, USA
Duration: 1997 Feb 61997 Feb 8

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Shimomura, K., Shimano, H., Okuda, F., Sakashita, N., Yamaguchi, Y., Oashi, T., Eimori, T., Inuishi, M., Arimoto, K., Maegawa, S., Inoue, Y., Nishimura, T., Komori, S., Kyuma, K., Yasuoka, A., & Abe, H. (1997). 1 V 46 ns 16 Mb SOI-DRAM with body control technique. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 40, 68-69.