1 V 46 ns 16 Mb SOI-DRAM with body control technique

Ken'ichi Shimomura*, Hiroki Shimano, Fumihiro Okuda, Narumi Sakashita, Yasuo Yamaguchi, Toshiyuki Oashi, Takahisa Eimori, Masahide Inuishi, Kazutami Arimoto, Shigeto Maegawa, Yasuo Inoue, Tadashi Nishimura, Shinji Komori, Kazuo Kyuma, Akihiko Yasuoka, Haruhiko Abe

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

16 Citations (Scopus)

Abstract

Silicon on insulator (SOI) technology is used to fabricate a dynamic random access memory (DRAM) capable of low voltage operation. The device uses a body-pulsed sense amplifier and a body-driven equalizer to accelerate low-voltage speed while partially-depleted and fully depleted transistors are used to enhance on-state current. The device's performance is evaluated experimentally.

Original languageEnglish
Pages (from-to)68-69
Number of pages2
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume40
Publication statusPublished - 1997 Feb 1
Externally publishedYes
EventProceedings of the 1997 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, USA
Duration: 1997 Feb 61997 Feb 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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