10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C

Tomonari Sato, Koji Takeda, Hiromitsu Imai, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Wataru Kobayashi, Takaaki Kakitsuka, Masaya Notomi, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We demonstrate the 10-Gbit/s direct modulation of optically pumped photonic-crystal (PhC) nanocavity lasers at up to 100°C by using an InGaAlAs multiple-quantum-well (MQW) structure as an active region. The device exhibits an output power exceeding 20 μW and a maximum 3-dB bandwidth of 8.3 GHz at an operating temperature of 100°C. In addition, when the laser is modulated at 10 Gbit/s, low energy costs of 7.2 fJ/bit at 25°C and 23.4 fJ/bit at 100°C are successfully achieved. Thus an InGaAlAs MQW PhC nanocavity laser is a promising candidate for the light source of a photonic network on a CMOS chip.

Original languageEnglish
Title of host publication2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
Pages143-146
Number of pages4
DOIs
Publication statusPublished - 2012 Dec 1
Externally publishedYes
Event2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012 - Santa Barbara, CA, United States
Duration: 2012 Aug 272012 Aug 30

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
CountryUnited States
CitySanta Barbara, CA
Period12/8/2712/8/30

Fingerprint

Photonic crystals
Semiconductor quantum wells
Modulation
Lasers
Photonics
Light sources
Bandwidth
Costs
Temperature

Keywords

  • Photonic crystals
  • Photonic integrated circuits
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Sato, T., Takeda, K., Imai, H., Shinya, A., Nozaki, K., Taniyama, H., ... Matsuo, S. (2012). 10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C. In 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012 (pp. 143-146). [6403342] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2012.6403342

10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C. / Sato, Tomonari; Takeda, Koji; Imai, Hiromitsu; Shinya, Akihiko; Nozaki, Kengo; Taniyama, Hideaki; Hasebe, Koichi; Kobayashi, Wataru; Kakitsuka, Takaaki; Notomi, Masaya; Matsuo, Shinji.

2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012. 2012. p. 143-146 6403342 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sato, T, Takeda, K, Imai, H, Shinya, A, Nozaki, K, Taniyama, H, Hasebe, K, Kobayashi, W, Kakitsuka, T, Notomi, M & Matsuo, S 2012, 10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C. in 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012., 6403342, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 143-146, 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012, Santa Barbara, CA, United States, 12/8/27. https://doi.org/10.1109/ICIPRM.2012.6403342
Sato T, Takeda K, Imai H, Shinya A, Nozaki K, Taniyama H et al. 10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C. In 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012. 2012. p. 143-146. 6403342. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2012.6403342
Sato, Tomonari ; Takeda, Koji ; Imai, Hiromitsu ; Shinya, Akihiko ; Nozaki, Kengo ; Taniyama, Hideaki ; Hasebe, Koichi ; Kobayashi, Wataru ; Kakitsuka, Takaaki ; Notomi, Masaya ; Matsuo, Shinji. / 10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C. 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012. 2012. pp. 143-146 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).
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AU - Sato, Tomonari

AU - Takeda, Koji

AU - Imai, Hiromitsu

AU - Shinya, Akihiko

AU - Nozaki, Kengo

AU - Taniyama, Hideaki

AU - Hasebe, Koichi

AU - Kobayashi, Wataru

AU - Kakitsuka, Takaaki

AU - Notomi, Masaya

AU - Matsuo, Shinji

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AB - We demonstrate the 10-Gbit/s direct modulation of optically pumped photonic-crystal (PhC) nanocavity lasers at up to 100°C by using an InGaAlAs multiple-quantum-well (MQW) structure as an active region. The device exhibits an output power exceeding 20 μW and a maximum 3-dB bandwidth of 8.3 GHz at an operating temperature of 100°C. In addition, when the laser is modulated at 10 Gbit/s, low energy costs of 7.2 fJ/bit at 25°C and 23.4 fJ/bit at 100°C are successfully achieved. Thus an InGaAlAs MQW PhC nanocavity laser is a promising candidate for the light source of a photonic network on a CMOS chip.

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