10-Gbit/s inp-based high-performance monolithic photoreceivers consisting of p-i-n photodiodes and hemt's

Kiyoto Takahata, Yoshifumi Muramoto, Kazutoshi Kato, Yuji Akatsu, Atsuo Kozen, Yuji Akahori

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

10-Gbit/s monolithic receiver OEIC's for 1.55ftm optical transmission systems were fabricated using a stacked layer structure of p-i-n photodiodes and HEMT's grown on InP substrates by single-step MOVPE. A receiver OEIC with a large O/E conversion factor was obtained by adding a three-stage differential amplifier to a conventional feedback amplifier monolithically integrated with a surface-illuminated p-i-n photodiode. The circuit configuration gave a preamplifier a transimpcdance of GOdBQ. The receiver OEIC achieved error-free operation at 10 Gbit/s without a postamplifier even with the optical input as low as -10.3dBm because of its large O/E conversion factor of 890V/W. A two-channel receiver OEIC array for use in a 10Gbit/s parallel photorcceiver module based on a PLC platform was made by monolithically integrating multimode WGPD's with HEMT preamplifiers. The side-illuminated structure of the WGPD is suitable for integration with other waveguide-type optical devices. The receiver OEIC arrays were fabricated on a 2-inch wafer with achieving excellent uniformity and a yield over 90%: average transimpedance and average 3-dB-down bandwidth were 43.8 dBf2 and 8.0 GHz. The two channels in the receiver OEIC array also showed sensitivities of -16.1 dBm and - 15.3dBm at 10Gbit/s. The two-channel photoreceiver module was constructed by assembling the OEIC array on a PLC platform. The frequency response of the module was almost the same as that of the OEIC chip and the crosstalk between channels in the module was better than -27dB in the frequency range below 6 GHz. These results demonstrate the feasibility of using our receiver OEIC's in various types of optical receiver systems.

Original languageEnglish
Pages (from-to)950-957
Number of pages8
JournalIEICE Transactions on Electronics
VolumeE83-C
Issue number6
Publication statusPublished - 2000 Jun
Externally publishedYes

Fingerprint

Integrated optoelectronics
Photodiodes
High electron mobility transistors
Programmable logic controllers
Feedback amplifiers
Differential amplifiers
Optical receivers
Metallorganic vapor phase epitaxy
Light transmission
Crosstalk
Optical devices
Frequency response
Waveguides
Bandwidth

Keywords

  • IIEMT
  • Integrated optoelectronics
  • Optical receivers
  • Waveguide p-i-n photodiodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

10-Gbit/s inp-based high-performance monolithic photoreceivers consisting of p-i-n photodiodes and hemt's. / Takahata, Kiyoto; Muramoto, Yoshifumi; Kato, Kazutoshi; Akatsu, Yuji; Kozen, Atsuo; Akahori, Yuji.

In: IEICE Transactions on Electronics, Vol. E83-C, No. 6, 06.2000, p. 950-957.

Research output: Contribution to journalArticle

Takahata, K, Muramoto, Y, Kato, K, Akatsu, Y, Kozen, A & Akahori, Y 2000, '10-Gbit/s inp-based high-performance monolithic photoreceivers consisting of p-i-n photodiodes and hemt's', IEICE Transactions on Electronics, vol. E83-C, no. 6, pp. 950-957.
Takahata, Kiyoto ; Muramoto, Yoshifumi ; Kato, Kazutoshi ; Akatsu, Yuji ; Kozen, Atsuo ; Akahori, Yuji. / 10-Gbit/s inp-based high-performance monolithic photoreceivers consisting of p-i-n photodiodes and hemt's. In: IEICE Transactions on Electronics. 2000 ; Vol. E83-C, No. 6. pp. 950-957.
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