10-Gb/s two-channel monolithic photoreceiver array using waveguide p-i-n PD's and HEMT's

K. Takahata; Y. Muramoto; Y. Akatsu; Y. Akahori; A. Kozen; Y. Itaya

doi:10.1109/68.491227

10-Gb/s two-channel monolithic photoreceiver array using waveguide p-i-n PD's and HEMT's

K. Takahata^*, Y. Muramoto, Y. Akatsu, Y. Akahori, A. Kozen, Y. Itaya

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Two-channel side-illuminated receiver OEIC arrays comprising waveguide p-i-n photodiodes and InAlAs-InGaAs-HEMT transimpedance amplifiers were fabricated with good uniformity on a 2-in wafer. The performances of the two channels were measured by on-wafer probe measurements and showed well-matched 3-dB bandwidth of 8.0 GHz, transimpedance of 155 Ω, and crosstalk less than -20 dB. The OEIC array operates at 10 Gbit/s with sensitivities of -16.1 dBm and -15.3 dBm for each channel for a bit error rate of 10^-9 at a wavelength of 1.55 μm. This is the highest bit rate yet reported for a long-wavelength monolithic photoreceiver array.

Original language	English
Pages (from-to)	563-565
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	8
Issue number	4
DOIs	https://doi.org/10.1109/68.491227
Publication status	Published - 1996 Apr
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.491227

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abstract = "Two-channel side-illuminated receiver OEIC arrays comprising waveguide p-i-n photodiodes and InAlAs-InGaAs-HEMT transimpedance amplifiers were fabricated with good uniformity on a 2-in wafer. The performances of the two channels were measured by on-wafer probe measurements and showed well-matched 3-dB bandwidth of 8.0 GHz, transimpedance of 155 Ω, and crosstalk less than -20 dB. The OEIC array operates at 10 Gbit/s with sensitivities of -16.1 dBm and -15.3 dBm for each channel for a bit error rate of 10-9 at a wavelength of 1.55 μm. This is the highest bit rate yet reported for a long-wavelength monolithic photoreceiver array.",

author = "K. Takahata and Y. Muramoto and Y. Akatsu and Y. Akahori and A. Kozen and Y. Itaya",

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T1 - 10-Gb/s two-channel monolithic photoreceiver array using waveguide p-i-n PD's and HEMT's

AU - Takahata, K.

AU - Muramoto, Y.

AU - Akatsu, Y.

AU - Akahori, Y.

AU - Kozen, A.

AU - Itaya, Y.

PY - 1996/4

Y1 - 1996/4

N2 - Two-channel side-illuminated receiver OEIC arrays comprising waveguide p-i-n photodiodes and InAlAs-InGaAs-HEMT transimpedance amplifiers were fabricated with good uniformity on a 2-in wafer. The performances of the two channels were measured by on-wafer probe measurements and showed well-matched 3-dB bandwidth of 8.0 GHz, transimpedance of 155 Ω, and crosstalk less than -20 dB. The OEIC array operates at 10 Gbit/s with sensitivities of -16.1 dBm and -15.3 dBm for each channel for a bit error rate of 10-9 at a wavelength of 1.55 μm. This is the highest bit rate yet reported for a long-wavelength monolithic photoreceiver array.

AB - Two-channel side-illuminated receiver OEIC arrays comprising waveguide p-i-n photodiodes and InAlAs-InGaAs-HEMT transimpedance amplifiers were fabricated with good uniformity on a 2-in wafer. The performances of the two channels were measured by on-wafer probe measurements and showed well-matched 3-dB bandwidth of 8.0 GHz, transimpedance of 155 Ω, and crosstalk less than -20 dB. The OEIC array operates at 10 Gbit/s with sensitivities of -16.1 dBm and -15.3 dBm for each channel for a bit error rate of 10-9 at a wavelength of 1.55 μm. This is the highest bit rate yet reported for a long-wavelength monolithic photoreceiver array.

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10-Gb/s two-channel monolithic photoreceiver array using waveguide p-i-n PD's and HEMT's

Abstract

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