10-nm-wire fabrication in GaAs/AlGaAs MQWs by Cl2 reactive ion beam etching using SiO2 sidewall masks

H. Arimoto, H. Kitada, Y. Sugiyama, A. Tackeuchi, A. Endo, S. Muto

Research output: Contribution to journalArticle

Abstract

Fabrication with a 20 nm size was demonstrated in a GaAs/AlGaAs multiquantum well (MQW) structure by reactive ion beam etching (RIBE) using SiO2 sidewall masks. The sidewall width can be precisely controlled by deposition time of SiO2. Size fluctuations are accordingly reduced. This paper also describes the results of photoluminescence measurements at 77 K, including a clear blue shift in the PL spectra for 20 nm MQW wires.

Original languageEnglish
Pages (from-to)303-306
Number of pages4
JournalMicroelectronic Engineering
Volume21
Issue number1-4
DOIs
Publication statusPublished - 1993 Apr

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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