10-nm-wire fabrication in GaAs/AlGaAs MQWs by Cl2 reactive ion beam etching using SiO2 sidewall masks

H. Arimoto, H. Kitada, Y. Sugiyama, Atsushi Tackeuchi, A. Endo, S. Muto

Research output: Contribution to journalArticle

Abstract

Fabrication with a 20 nm size was demonstrated in a GaAs/AlGaAs multiquantum well (MQW) structure by reactive ion beam etching (RIBE) using SiO2 sidewall masks. The sidewall width can be precisely controlled by deposition time of SiO2. Size fluctuations are accordingly reduced. This paper also describes the results of photoluminescence measurements at 77 K, including a clear blue shift in the PL spectra for 20 nm MQW wires.

Original languageEnglish
Pages (from-to)303-306
Number of pages4
JournalMicroelectronic Engineering
Volume21
Issue number1-4
DOIs
Publication statusPublished - 1993
Externally publishedYes

Fingerprint

Ion beams
aluminum gallium arsenides
Masks
Etching
Photoluminescence
masks
ion beams
etching
wire
Wire
Fabrication
fabrication
blue shift
photoluminescence
gallium arsenide

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

10-nm-wire fabrication in GaAs/AlGaAs MQWs by Cl2 reactive ion beam etching using SiO2 sidewall masks. / Arimoto, H.; Kitada, H.; Sugiyama, Y.; Tackeuchi, Atsushi; Endo, A.; Muto, S.

In: Microelectronic Engineering, Vol. 21, No. 1-4, 1993, p. 303-306.

Research output: Contribution to journalArticle

Arimoto, H. ; Kitada, H. ; Sugiyama, Y. ; Tackeuchi, Atsushi ; Endo, A. ; Muto, S. / 10-nm-wire fabrication in GaAs/AlGaAs MQWs by Cl2 reactive ion beam etching using SiO2 sidewall masks. In: Microelectronic Engineering. 1993 ; Vol. 21, No. 1-4. pp. 303-306.
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