100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays

Takao Yamaguchi, Keiichi Yodoshi, Kimihide Minakuchi, Norio Tabuchi, Yasuyuki Bessho, Yasuaki Inoue, Koji Komeda, Kazushi Mori, Atsushi Tajiri, Koji Tominaga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Four-beam individually addressable monolithic AlGaAs laser-diode arrays have been developed in which each laser element can emit over 100 mW of output power in single-mode operation. The structural features of this laser include current-blocking regions near the facets and a long cavity length to obtain higher power, as well as a cBN heatsink and a 70 μm-thick laser chip to improve thermal crosstalk between laser elements. The maximum output power of each laser element is about 200 mW and the lasing wavelength is about 834 nm. Thermal crosstalk between 100 μm-spaced neighboring elements is only 1.0% at 100 mW.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Place of PublicationBellingham, WA, United States
PublisherPubl by Int Soc for Optical Engineering
Pages363-371
Number of pages9
Volume1418
ISBN (Print)0819405086
Publication statusPublished - 1991
Externally publishedYes
EventLaser Diode Technology and Applications III - Los Angeles, CA, USA
Duration: 1991 Jan 231991 Jan 25

Other

OtherLaser Diode Technology and Applications III
CityLos Angeles, CA, USA
Period91/1/2391/1/25

Fingerprint

aluminum gallium arsenides
Semiconductor lasers
semiconductor lasers
Lasers
lasers
Crosstalk
crosstalk
output
Laser modes
lasing
flat surfaces
chips
Wavelength
cavities
wavelengths
Hot Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Yamaguchi, T., Yodoshi, K., Minakuchi, K., Tabuchi, N., Bessho, Y., Inoue, Y., ... Tominaga, K. (1991). 100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1418, pp. 363-371). Bellingham, WA, United States: Publ by Int Soc for Optical Engineering.

100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays. / Yamaguchi, Takao; Yodoshi, Keiichi; Minakuchi, Kimihide; Tabuchi, Norio; Bessho, Yasuyuki; Inoue, Yasuaki; Komeda, Koji; Mori, Kazushi; Tajiri, Atsushi; Tominaga, Koji.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1418 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1991. p. 363-371.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamaguchi, T, Yodoshi, K, Minakuchi, K, Tabuchi, N, Bessho, Y, Inoue, Y, Komeda, K, Mori, K, Tajiri, A & Tominaga, K 1991, 100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 1418, Publ by Int Soc for Optical Engineering, Bellingham, WA, United States, pp. 363-371, Laser Diode Technology and Applications III, Los Angeles, CA, USA, 91/1/23.
Yamaguchi T, Yodoshi K, Minakuchi K, Tabuchi N, Bessho Y, Inoue Y et al. 100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1418. Bellingham, WA, United States: Publ by Int Soc for Optical Engineering. 1991. p. 363-371
Yamaguchi, Takao ; Yodoshi, Keiichi ; Minakuchi, Kimihide ; Tabuchi, Norio ; Bessho, Yasuyuki ; Inoue, Yasuaki ; Komeda, Koji ; Mori, Kazushi ; Tajiri, Atsushi ; Tominaga, Koji. / 100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1418 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1991. pp. 363-371
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