Abstract
Four-beam individually addressable monolithic AlGaAs laser-diode arrays have been developed in which each laser element can emit over 100 mW of output power in single-mode operation. The structural features of this laser include current-blocking regions near the facets and a long cavity length to obtain higher power, as well as a cBN heatsink and a 70 μm-thick laser chip to improve thermal crosstalk between laser elements. The maximum output power of each laser element is about 200 mW and the lasing wavelength is about 834 nm. Thermal crosstalk between 100 μm-spaced neighboring elements is only 1.0% at 100 mW.
| Original language | English |
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| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Place of Publication | Bellingham, WA, United States |
| Publisher | Publ by Int Soc for Optical Engineering |
| Pages | 363-371 |
| Number of pages | 9 |
| Volume | 1418 |
| ISBN (Print) | 0819405086 |
| Publication status | Published - 1991 |
| Externally published | Yes |
| Event | Laser Diode Technology and Applications III - Los Angeles, CA, USA Duration: 1991 Jan 23 → 1991 Jan 25 |
Other
| Other | Laser Diode Technology and Applications III |
|---|---|
| City | Los Angeles, CA, USA |
| Period | 91/1/23 → 91/1/25 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics