10Gbit/s optical demultiplexing and switching by sinusoidally driven InGaAsP electroabsorption modulators

M. Suzuki, H. Tanaka, Yuichi Matsushima

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

10Gbit/s optical demultiplexing and switching were performed by sinusoidally driven InGaAsP electroabsorption modulators, for the first time. An optical gate with variable gate width was obtained just with sinusoidal voltage. In-line demultiplexing/switching by the modulator was effective in reducing the amplified spontaneous emission noise in optical amplifier systems.

Original languageEnglish
Pages (from-to)934-935
Number of pages2
JournalElectronics Letters
Volume28
Issue number10
Publication statusPublished - 1992 May 7
Externally publishedYes

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Electroabsorption modulators
Demultiplexing
Light amplifiers
Spontaneous emission
Modulators
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

10Gbit/s optical demultiplexing and switching by sinusoidally driven InGaAsP electroabsorption modulators. / Suzuki, M.; Tanaka, H.; Matsushima, Yuichi.

In: Electronics Letters, Vol. 28, No. 10, 07.05.1992, p. 934-935.

Research output: Contribution to journalArticle

Suzuki, M. ; Tanaka, H. ; Matsushima, Yuichi. / 10Gbit/s optical demultiplexing and switching by sinusoidally driven InGaAsP electroabsorption modulators. In: Electronics Letters. 1992 ; Vol. 28, No. 10. pp. 934-935.
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