TY - GEN
T1 - 118GHz CMOS amplifier with group delay variation of 11.2ps and 3dB bandwidth of 20.4GHz
AU - Orii, Akihiko
AU - Katayama, Kosuke
AU - Motoyoshi, Mizuki
AU - Takano, Kyoya
AU - Fujishima, Minoru
PY - 2012
Y1 - 2012
N2 - In this paper, we report the design of an amplifier with a flat group delay and gain for use in a high-speed D-band wireless transceiver without a group delay equalizer. Compared with a conventional amplifier with a group delay equalizer, the amplifier have achieved a decrease in the power consumption and an increase in the communication speed. The peak gain is 8.1dB at 118.6GHz with a power consumption of 19.8mW. The 3dB bandwidth is 20.4dB with a group delay variation of 43.3 to 65.8ps.
AB - In this paper, we report the design of an amplifier with a flat group delay and gain for use in a high-speed D-band wireless transceiver without a group delay equalizer. Compared with a conventional amplifier with a group delay equalizer, the amplifier have achieved a decrease in the power consumption and an increase in the communication speed. The peak gain is 8.1dB at 118.6GHz with a power consumption of 19.8mW. The 3dB bandwidth is 20.4dB with a group delay variation of 43.3 to 65.8ps.
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U2 - 10.1109/IMFEDK.2012.6218630
DO - 10.1109/IMFEDK.2012.6218630
M3 - Conference contribution
AN - SCOPUS:84864213613
SN - 9781467308359
T3 - IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai
SP - 158
EP - 159
BT - IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai
T2 - 10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012
Y2 - 9 May 2012 through 11 May 2012
ER -