@inproceedings{a63dcc5b21084d72ba98c4ee686605d1,
title = "125 GHz CMOS oscillator controlled by p-type bulk voltage",
abstract = "We present a 125 GHz voltage-controlled oscillator (VCO) with a 3.4% tuning range based on a 65 nm CMOS process. The oscillator is tuned by utilizing the capacitance variation in NMOSFETs which is controlled by using the p-type bulk voltage of the NMOSFETs. The VCO has a simple structure to achieve a small internal loss. The VCO has an oscillation frequency of 124.9 GHz, an output power of 1.6 dBm and a power consumption of 17.0 mW at a drain voltage of 1.0 V and a bulk voltage of 0 V. The tuning range is from 122.0 GHz to 126.3 GHz.",
keywords = "65 nm, CMOS, D-band, MOSFET, VCO, oscillator",
author = "Naoko Ono and Mizuki Motoyoshi and Kousuke Katayama and Minoru Fujishima",
year = "2012",
month = may,
day = "11",
doi = "10.1109/RWS.2012.6175387",
language = "English",
isbn = "9781457711541",
series = "RWW 2012 - Proceedings: IEEE Radio and Wireless Symposium, RWS 2012",
pages = "215--218",
booktitle = "RWW 2012 - Proceedings",
note = "2012 6th IEEE Radio and Wireless Week, RWW 2012 - 2012 IEEE Radio and Wireless Symposium, RWS 2012 ; Conference date: 15-01-2012 Through 18-01-2012",
}