125 GHz CMOS oscillator controlled by p-type bulk voltage

Naoko Ono, Mizuki Motoyoshi, Kousuke Katayama, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We present a 125 GHz voltage-controlled oscillator (VCO) with a 3.4% tuning range based on a 65 nm CMOS process. The oscillator is tuned by utilizing the capacitance variation in NMOSFETs which is controlled by using the p-type bulk voltage of the NMOSFETs. The VCO has a simple structure to achieve a small internal loss. The VCO has an oscillation frequency of 124.9 GHz, an output power of 1.6 dBm and a power consumption of 17.0 mW at a drain voltage of 1.0 V and a bulk voltage of 0 V. The tuning range is from 122.0 GHz to 126.3 GHz.

Original languageEnglish
Title of host publicationRWW 2012 - Proceedings
Subtitle of host publicationIEEE Radio and Wireless Symposium, RWS 2012
Pages215-218
Number of pages4
DOIs
Publication statusPublished - 2012 May 11
Event2012 6th IEEE Radio and Wireless Week, RWW 2012 - 2012 IEEE Radio and Wireless Symposium, RWS 2012 - Santa Clara, CA, United States
Duration: 2012 Jan 152012 Jan 18

Publication series

NameRWW 2012 - Proceedings: IEEE Radio and Wireless Symposium, RWS 2012

Conference

Conference2012 6th IEEE Radio and Wireless Week, RWW 2012 - 2012 IEEE Radio and Wireless Symposium, RWS 2012
CountryUnited States
CitySanta Clara, CA
Period12/1/1512/1/18

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Keywords

  • 65 nm
  • CMOS
  • D-band
  • MOSFET
  • VCO
  • oscillator

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Ono, N., Motoyoshi, M., Katayama, K., & Fujishima, M. (2012). 125 GHz CMOS oscillator controlled by p-type bulk voltage. In RWW 2012 - Proceedings: IEEE Radio and Wireless Symposium, RWS 2012 (pp. 215-218). [6175387] (RWW 2012 - Proceedings: IEEE Radio and Wireless Symposium, RWS 2012). https://doi.org/10.1109/RWS.2012.6175387