1.3-μ m 4 × 25-Gb/s monolithically integrated light source for metro area 100-Gb/s ethernet

T. Fujisawa, S. Kanazawa, H. Ishii, N. Nunoya, Y. Kawaguchi, A. Ohki, N. Fujiwara, K. Takahata, R. Iga, F. Kano, H. Oohashi

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

A 1.3-μm monolithically integrated light source for metro area 100-Gb/s Ethernet is developed. Four 25-Gb/s electroabsorption modulators integrated with distributed-feedback lasers and their multiplexer are monolithically integrated on one chip. A shallow ridge waveguide is used for lasers and modulators for large modulation bandwidth, and a deep ridge waveguide is used for the multiplexer region due to its low bending and radiation losses. The integration of hetero-waveguide devices enables the very small chip size of 2 × 2.6 mm2. With the device, 100-Gb/s (4 × 25-Gb/s simultaneous) operation is demonstrated with the clear eye-openings, and error-free 40-km single-mode fiber transmission is achieved for the first time.

Original languageEnglish
Article number5688187
Pages (from-to)356-358
Number of pages3
JournalIEEE Photonics Technology Letters
Volume23
Issue number6
DOIs
Publication statusPublished - 2011 Mar 7
Externally publishedYes

Keywords

  • 100-Gb/s Ethernet
  • Electroabsorption modulator integrated with distributed-feedback (DFB) laser
  • monolithic integration

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Fujisawa, T., Kanazawa, S., Ishii, H., Nunoya, N., Kawaguchi, Y., Ohki, A., Fujiwara, N., Takahata, K., Iga, R., Kano, F., & Oohashi, H. (2011). 1.3-μ m 4 × 25-Gb/s monolithically integrated light source for metro area 100-Gb/s ethernet. IEEE Photonics Technology Letters, 23(6), 356-358. [5688187]. https://doi.org/10.1109/LPT.2011.2106117