133GHz CMOS power amplifier with 16dB gain and +8dBm saturated output power for multi-gigabit communication

Kosuke Katayama, Mizuki Motoyoshi, Kyoya Takano, Li Chen Yang, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

Indoor communication is desired in CMOS millimeter-wave transceivers. To realize indoor communication, a power amplifier with a high RF output power without compromising gain, bandwidth or power efficiency is required. In this paper, a strategic design for gate width selection and matching-network optimization is introduced. A power amplifier is fabricated using a 40nm CMOS technology process with a chip area of 0.30mm2 and a power consumption of 89.1mW at 1.1V DC supply. Its peak gain is 16.8dB at 133GHz and its 3dB bandwidth is 13.0GHz. Its output-referred 1dB compression point is 6.8dBm, its saturated output power is 8.6dBm and its peak power added efficiency is 7.4%. The performance of this power amplifier is evaluated using an indicator and it is confirmed that it has the best performance among power amplifiers over 100GHz.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013
Subtitle of host publication8th European Microwave Integrated Circuits Conference
Pages69-72
Number of pages4
Publication statusPublished - 2013
Externally publishedYes
Event2013 8th European Microwave Integrated Circuits Conference, EuMIC 2013 - Held as Part of 16th European Microwave Week, EuMW 2013 - Nuremberg, Germany
Duration: 2013 Oct 62013 Oct 8

Other

Other2013 8th European Microwave Integrated Circuits Conference, EuMIC 2013 - Held as Part of 16th European Microwave Week, EuMW 2013
CountryGermany
CityNuremberg
Period13/10/613/10/8

Fingerprint

Power amplifiers
Communication
Bandwidth
Transceivers
Millimeter waves
Electric power utilization

Keywords

  • ASK
  • CMOS
  • D-band
  • Millimeter-wave

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Katayama, K., Motoyoshi, M., Takano, K., Yang, L. C., & Fujishima, M. (2013). 133GHz CMOS power amplifier with 16dB gain and +8dBm saturated output power for multi-gigabit communication. In European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference (pp. 69-72). [6687787]

133GHz CMOS power amplifier with 16dB gain and +8dBm saturated output power for multi-gigabit communication. / Katayama, Kosuke; Motoyoshi, Mizuki; Takano, Kyoya; Yang, Li Chen; Fujishima, Minoru.

European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference. 2013. p. 69-72 6687787.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Katayama, K, Motoyoshi, M, Takano, K, Yang, LC & Fujishima, M 2013, 133GHz CMOS power amplifier with 16dB gain and +8dBm saturated output power for multi-gigabit communication. in European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference., 6687787, pp. 69-72, 2013 8th European Microwave Integrated Circuits Conference, EuMIC 2013 - Held as Part of 16th European Microwave Week, EuMW 2013, Nuremberg, Germany, 13/10/6.
Katayama K, Motoyoshi M, Takano K, Yang LC, Fujishima M. 133GHz CMOS power amplifier with 16dB gain and +8dBm saturated output power for multi-gigabit communication. In European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference. 2013. p. 69-72. 6687787
Katayama, Kosuke ; Motoyoshi, Mizuki ; Takano, Kyoya ; Yang, Li Chen ; Fujishima, Minoru. / 133GHz CMOS power amplifier with 16dB gain and +8dBm saturated output power for multi-gigabit communication. European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference. 2013. pp. 69-72
@inproceedings{a3e73780a7a148c2aa79878f19f5e19d,
title = "133GHz CMOS power amplifier with 16dB gain and +8dBm saturated output power for multi-gigabit communication",
abstract = "Indoor communication is desired in CMOS millimeter-wave transceivers. To realize indoor communication, a power amplifier with a high RF output power without compromising gain, bandwidth or power efficiency is required. In this paper, a strategic design for gate width selection and matching-network optimization is introduced. A power amplifier is fabricated using a 40nm CMOS technology process with a chip area of 0.30mm2 and a power consumption of 89.1mW at 1.1V DC supply. Its peak gain is 16.8dB at 133GHz and its 3dB bandwidth is 13.0GHz. Its output-referred 1dB compression point is 6.8dBm, its saturated output power is 8.6dBm and its peak power added efficiency is 7.4{\%}. The performance of this power amplifier is evaluated using an indicator and it is confirmed that it has the best performance among power amplifiers over 100GHz.",
keywords = "ASK, CMOS, D-band, Millimeter-wave",
author = "Kosuke Katayama and Mizuki Motoyoshi and Kyoya Takano and Yang, {Li Chen} and Minoru Fujishima",
year = "2013",
language = "English",
isbn = "9782874870323",
pages = "69--72",
booktitle = "European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013",

}

TY - GEN

T1 - 133GHz CMOS power amplifier with 16dB gain and +8dBm saturated output power for multi-gigabit communication

AU - Katayama, Kosuke

AU - Motoyoshi, Mizuki

AU - Takano, Kyoya

AU - Yang, Li Chen

AU - Fujishima, Minoru

PY - 2013

Y1 - 2013

N2 - Indoor communication is desired in CMOS millimeter-wave transceivers. To realize indoor communication, a power amplifier with a high RF output power without compromising gain, bandwidth or power efficiency is required. In this paper, a strategic design for gate width selection and matching-network optimization is introduced. A power amplifier is fabricated using a 40nm CMOS technology process with a chip area of 0.30mm2 and a power consumption of 89.1mW at 1.1V DC supply. Its peak gain is 16.8dB at 133GHz and its 3dB bandwidth is 13.0GHz. Its output-referred 1dB compression point is 6.8dBm, its saturated output power is 8.6dBm and its peak power added efficiency is 7.4%. The performance of this power amplifier is evaluated using an indicator and it is confirmed that it has the best performance among power amplifiers over 100GHz.

AB - Indoor communication is desired in CMOS millimeter-wave transceivers. To realize indoor communication, a power amplifier with a high RF output power without compromising gain, bandwidth or power efficiency is required. In this paper, a strategic design for gate width selection and matching-network optimization is introduced. A power amplifier is fabricated using a 40nm CMOS technology process with a chip area of 0.30mm2 and a power consumption of 89.1mW at 1.1V DC supply. Its peak gain is 16.8dB at 133GHz and its 3dB bandwidth is 13.0GHz. Its output-referred 1dB compression point is 6.8dBm, its saturated output power is 8.6dBm and its peak power added efficiency is 7.4%. The performance of this power amplifier is evaluated using an indicator and it is confirmed that it has the best performance among power amplifiers over 100GHz.

KW - ASK

KW - CMOS

KW - D-band

KW - Millimeter-wave

UR - http://www.scopus.com/inward/record.url?scp=84893459382&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893459382&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9782874870323

SP - 69

EP - 72

BT - European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013

ER -