135GHz CMOS small-signal amplifier with power-efficient bias method

Mizuki Motoyoshi, Kyoya Takano, Kosuke Katayama, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 135GHz CMOS wideband amplifier is proposed with high power efficiency to achieve a high-speed D-band wireless receiver. The proposed amplifier was fabricated with standard 1P12M 40nm CMOS technology. From measurement, the peak gain is 25dB with the power consumption was 140mW with a supply voltage of 1.1V. The amplifier achieved figure of merits of 25fJ. As a result, the performance characteristics required to realize a low-power front-end amplifier for a D-band wireless receiver were obtained.

Original languageEnglish
Title of host publication2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013
Pages348-350
Number of pages3
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 3rd Asia-Pacific Microwave Conference, APMC 2013 - Seoul
Duration: 2013 Nov 52013 Nov 8

Other

Other2013 3rd Asia-Pacific Microwave Conference, APMC 2013
CitySeoul
Period13/11/513/11/8

Fingerprint

Broadband amplifiers
Electric power utilization
Electric potential

Keywords

  • CMOS
  • D-band
  • high power efficiency
  • millimeter wave
  • small-signal amplifier
  • wideband

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Motoyoshi, M., Takano, K., Katayama, K., & Fujishima, M. (2013). 135GHz CMOS small-signal amplifier with power-efficient bias method. In 2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013 (pp. 348-350). [6695142] https://doi.org/10.1109/APMC.2013.6695142

135GHz CMOS small-signal amplifier with power-efficient bias method. / Motoyoshi, Mizuki; Takano, Kyoya; Katayama, Kosuke; Fujishima, Minoru.

2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013. 2013. p. 348-350 6695142.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Motoyoshi, M, Takano, K, Katayama, K & Fujishima, M 2013, 135GHz CMOS small-signal amplifier with power-efficient bias method. in 2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013., 6695142, pp. 348-350, 2013 3rd Asia-Pacific Microwave Conference, APMC 2013, Seoul, 13/11/5. https://doi.org/10.1109/APMC.2013.6695142
Motoyoshi M, Takano K, Katayama K, Fujishima M. 135GHz CMOS small-signal amplifier with power-efficient bias method. In 2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013. 2013. p. 348-350. 6695142 https://doi.org/10.1109/APMC.2013.6695142
Motoyoshi, Mizuki ; Takano, Kyoya ; Katayama, Kosuke ; Fujishima, Minoru. / 135GHz CMOS small-signal amplifier with power-efficient bias method. 2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013. 2013. pp. 348-350
@inproceedings{5207565aa69543979f74e08ef0d1d400,
title = "135GHz CMOS small-signal amplifier with power-efficient bias method",
abstract = "A 135GHz CMOS wideband amplifier is proposed with high power efficiency to achieve a high-speed D-band wireless receiver. The proposed amplifier was fabricated with standard 1P12M 40nm CMOS technology. From measurement, the peak gain is 25dB with the power consumption was 140mW with a supply voltage of 1.1V. The amplifier achieved figure of merits of 25fJ. As a result, the performance characteristics required to realize a low-power front-end amplifier for a D-band wireless receiver were obtained.",
keywords = "CMOS, D-band, high power efficiency, millimeter wave, small-signal amplifier, wideband",
author = "Mizuki Motoyoshi and Kyoya Takano and Kosuke Katayama and Minoru Fujishima",
year = "2013",
doi = "10.1109/APMC.2013.6695142",
language = "English",
isbn = "9781479914746",
pages = "348--350",
booktitle = "2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013",

}

TY - GEN

T1 - 135GHz CMOS small-signal amplifier with power-efficient bias method

AU - Motoyoshi, Mizuki

AU - Takano, Kyoya

AU - Katayama, Kosuke

AU - Fujishima, Minoru

PY - 2013

Y1 - 2013

N2 - A 135GHz CMOS wideband amplifier is proposed with high power efficiency to achieve a high-speed D-band wireless receiver. The proposed amplifier was fabricated with standard 1P12M 40nm CMOS technology. From measurement, the peak gain is 25dB with the power consumption was 140mW with a supply voltage of 1.1V. The amplifier achieved figure of merits of 25fJ. As a result, the performance characteristics required to realize a low-power front-end amplifier for a D-band wireless receiver were obtained.

AB - A 135GHz CMOS wideband amplifier is proposed with high power efficiency to achieve a high-speed D-band wireless receiver. The proposed amplifier was fabricated with standard 1P12M 40nm CMOS technology. From measurement, the peak gain is 25dB with the power consumption was 140mW with a supply voltage of 1.1V. The amplifier achieved figure of merits of 25fJ. As a result, the performance characteristics required to realize a low-power front-end amplifier for a D-band wireless receiver were obtained.

KW - CMOS

KW - D-band

KW - high power efficiency

KW - millimeter wave

KW - small-signal amplifier

KW - wideband

UR - http://www.scopus.com/inward/record.url?scp=84893354235&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893354235&partnerID=8YFLogxK

U2 - 10.1109/APMC.2013.6695142

DO - 10.1109/APMC.2013.6695142

M3 - Conference contribution

SN - 9781479914746

SP - 348

EP - 350

BT - 2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013

ER -