135GHz CMOS small-signal amplifier with power-efficient bias method

Mizuki Motoyoshi, Kyoya Takano, Kosuke Katayama, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 135GHz CMOS wideband amplifier is proposed with high power efficiency to achieve a high-speed D-band wireless receiver. The proposed amplifier was fabricated with standard 1P12M 40nm CMOS technology. From measurement, the peak gain is 25dB with the power consumption was 140mW with a supply voltage of 1.1V. The amplifier achieved figure of merits of 25fJ. As a result, the performance characteristics required to realize a low-power front-end amplifier for a D-band wireless receiver were obtained.

Original languageEnglish
Title of host publication2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013
Pages348-350
Number of pages3
DOIs
Publication statusPublished - 2013
Event2013 3rd Asia-Pacific Microwave Conference, APMC 2013 - Seoul, Korea, Republic of
Duration: 2013 Nov 52013 Nov 8

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2013 3rd Asia-Pacific Microwave Conference, APMC 2013
CountryKorea, Republic of
CitySeoul
Period13/11/513/11/8

Keywords

  • CMOS
  • D-band
  • high power efficiency
  • millimeter wave
  • small-signal amplifier
  • wideband

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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