15-GHz-band low-power and low phase-noise LC VCO IC with a second harmonic filter in 130-nm SiGe BiCMOS

Xu Xiao, Xinyi Wang, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, a second harmonic filtering technique is presented for improvement of phase noise performance of a Class-C LC-VCO IC. The second harmonic filter is employed to terminate the output port of the LC-VCO in low impedance at second harmonic frequency, which mainly prevents the noise modulated by the transistor nonlinearities. In addition, since the impedance of the second harmonic filter becomes capacitive at the fundamental frequency, the phase-noise performance is improved. Class-C operation is also effective for less power and better phase-noise performance. The LC-VCO IC was fabricated and evaluated in 130-nm SiGe BiCMOS technology. The LC-VCO IC has presented a measured phase noise of-118.1 dBc/Hz at 5 MHz offset from the 15.2 GHz carrier frequency with a dc power consumption of about 2.25 mW.

Original languageEnglish
Title of host publicationProceedings of the 2016 IEEE Region 10 Conference, TENCON 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2525-2527
Number of pages3
ISBN (Electronic)9781509025961
DOIs
Publication statusPublished - 2017 Feb 8
Event2016 IEEE Region 10 Conference, TENCON 2016 - Singapore, Singapore
Duration: 2016 Nov 222016 Nov 25

Other

Other2016 IEEE Region 10 Conference, TENCON 2016
CountrySingapore
CitySingapore
Period16/11/2216/11/25

Fingerprint

Variable frequency oscillators
Phase noise
BiCMOS technology
Transistors
Electric power utilization

Keywords

  • 130-nm SiGe BiCMOS
  • Class-C LC-VCO IC
  • low-phase noise
  • second harmonic filter

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Xiao, X., Wang, X., & Yoshimasu, T. (2017). 15-GHz-band low-power and low phase-noise LC VCO IC with a second harmonic filter in 130-nm SiGe BiCMOS. In Proceedings of the 2016 IEEE Region 10 Conference, TENCON 2016 (pp. 2525-2527). [7848489] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TENCON.2016.7848489

15-GHz-band low-power and low phase-noise LC VCO IC with a second harmonic filter in 130-nm SiGe BiCMOS. / Xiao, Xu; Wang, Xinyi; Yoshimasu, Toshihiko.

Proceedings of the 2016 IEEE Region 10 Conference, TENCON 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 2525-2527 7848489.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Xiao, X, Wang, X & Yoshimasu, T 2017, 15-GHz-band low-power and low phase-noise LC VCO IC with a second harmonic filter in 130-nm SiGe BiCMOS. in Proceedings of the 2016 IEEE Region 10 Conference, TENCON 2016., 7848489, Institute of Electrical and Electronics Engineers Inc., pp. 2525-2527, 2016 IEEE Region 10 Conference, TENCON 2016, Singapore, Singapore, 16/11/22. https://doi.org/10.1109/TENCON.2016.7848489
Xiao X, Wang X, Yoshimasu T. 15-GHz-band low-power and low phase-noise LC VCO IC with a second harmonic filter in 130-nm SiGe BiCMOS. In Proceedings of the 2016 IEEE Region 10 Conference, TENCON 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 2525-2527. 7848489 https://doi.org/10.1109/TENCON.2016.7848489
Xiao, Xu ; Wang, Xinyi ; Yoshimasu, Toshihiko. / 15-GHz-band low-power and low phase-noise LC VCO IC with a second harmonic filter in 130-nm SiGe BiCMOS. Proceedings of the 2016 IEEE Region 10 Conference, TENCON 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 2525-2527
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abstract = "In this paper, a second harmonic filtering technique is presented for improvement of phase noise performance of a Class-C LC-VCO IC. The second harmonic filter is employed to terminate the output port of the LC-VCO in low impedance at second harmonic frequency, which mainly prevents the noise modulated by the transistor nonlinearities. In addition, since the impedance of the second harmonic filter becomes capacitive at the fundamental frequency, the phase-noise performance is improved. Class-C operation is also effective for less power and better phase-noise performance. The LC-VCO IC was fabricated and evaluated in 130-nm SiGe BiCMOS technology. The LC-VCO IC has presented a measured phase noise of-118.1 dBc/Hz at 5 MHz offset from the 15.2 GHz carrier frequency with a dc power consumption of about 2.25 mW.",
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