1550 nm-Band InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers Grown on InP(311)B Substrate with Side-Wall Gratings Simultaneously Fabricated with a Ridge Waveguide

Runa Kaneko*, Ryosuke Morita, Ryumi Katsuhara, Ryota Yabuki, Atsushi Matsumoto, Koichi Akahane, Yuichi Matsushima, Hiroshi Ishikawa, Katsuyuki Utaka

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A 1550 nm-band InAs/InGaAlAs quantum dot (QD) distributed feedback (DFB) laser is fabricated, in which the side-wall grating is formed in a simultaneous process with the ridge waveguide, and room-temperature continuous-wave single-mode oscillation is achieved. A rather low-threshold current density of about 2.2 kA cm−2 is obtained. Side-mode suppression ratios (SMSRs) are 28 dB just above the threshold current Ith and 44 dB at I/Ith = 2.0. Antireflection (AR) coating suppresses the amplified spontaneous emission (ASE) and increases the slope efficiency by a factor of 1.3.

Original languageEnglish
JournalPhysica Status Solidi (A) Applications and Materials Science
DOIs
Publication statusAccepted/In press - 2021

Keywords

  • 1550 nm-band quantum dots
  • distributed feedback lasers
  • InAs/InGaAlAs
  • single-mode oscillations

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of '1550 nm-Band InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers Grown on InP(311)B Substrate with Side-Wall Gratings Simultaneously Fabricated with a Ridge Waveguide'. Together they form a unique fingerprint.

Cite this