2-GHz band ultra-low-voltage LC-VCO IC in 130nm CMOS technology

Xin Yang; Kangyang Xu; Wei Wang; Yorikatsu Uchida; Toshihiko Yoshimasu

doi:10.1109/EDSSC.2013.6628052

2-GHz band ultra-low-voltage LC-VCO IC in 130nm CMOS technology

Xin Yang, Kangyang Xu, Wei Wang, Yorikatsu Uchida, Toshihiko Yoshimasu

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

An ultra-low-voltage LC-VCO IC has been demonstrated using 130nm CMOS technology. The LC-VCO IC includes a cross-coupled nMOSFET pair, a spiral inductor, MOS varactors and a buffer amplifier. The LC-VCO IC is designed, fabricated and fully evaluated on wafer. The VCO IC exhibits a phase noise of -137 dBc/Hz at 1 MHz offset from the 2.2 GHz carrier at a supply voltage of only 0.5 V.

Original language	English
Title of host publication	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs	https://doi.org/10.1109/EDSSC.2013.6628052
Publication status	Published - 2013 Dec 23
Event	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong Duration: 2013 Jun 3 → 2013 Jun 5

Publication series

Name	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Conference

Conference	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Country/Territory	Hong Kong
City	Hong Kong
Period	13/6/3 → 13/6/5

Keywords

LC-VCO
Low Phase Noise
Ultra-Low-Power

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDSSC.2013.6628052

Cite this

Yang, X., Xu, K., Wang, W., Uchida, Y., & Yoshimasu, T. (2013). 2-GHz band ultra-low-voltage LC-VCO IC in 130nm CMOS technology. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628052] (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628052

2-GHz band ultra-low-voltage LC-VCO IC in 130nm CMOS technology. / Yang, Xin; Xu, Kangyang; Wang, Wei et al.

2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628052 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yang, X, Xu, K, Wang, W, Uchida, Y & Yoshimasu, T 2013, 2-GHz band ultra-low-voltage LC-VCO IC in 130nm CMOS technology. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628052, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, Hong Kong, 13/6/3. https://doi.org/10.1109/EDSSC.2013.6628052

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abstract = "An ultra-low-voltage LC-VCO IC has been demonstrated using 130nm CMOS technology. The LC-VCO IC includes a cross-coupled nMOSFET pair, a spiral inductor, MOS varactors and a buffer amplifier. The LC-VCO IC is designed, fabricated and fully evaluated on wafer. The VCO IC exhibits a phase noise of -137 dBc/Hz at 1 MHz offset from the 2.2 GHz carrier at a supply voltage of only 0.5 V.",

keywords = "LC-VCO, Low Phase Noise, Ultra-Low-Power",

author = "Xin Yang and Kangyang Xu and Wei Wang and Yorikatsu Uchida and Toshihiko Yoshimasu",

year = "2013",

month = dec,

day = "23",

doi = "10.1109/EDSSC.2013.6628052",

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AU - Yoshimasu, Toshihiko

PY - 2013/12/23

Y1 - 2013/12/23

N2 - An ultra-low-voltage LC-VCO IC has been demonstrated using 130nm CMOS technology. The LC-VCO IC includes a cross-coupled nMOSFET pair, a spiral inductor, MOS varactors and a buffer amplifier. The LC-VCO IC is designed, fabricated and fully evaluated on wafer. The VCO IC exhibits a phase noise of -137 dBc/Hz at 1 MHz offset from the 2.2 GHz carrier at a supply voltage of only 0.5 V.

AB - An ultra-low-voltage LC-VCO IC has been demonstrated using 130nm CMOS technology. The LC-VCO IC includes a cross-coupled nMOSFET pair, a spiral inductor, MOS varactors and a buffer amplifier. The LC-VCO IC is designed, fabricated and fully evaluated on wafer. The VCO IC exhibits a phase noise of -137 dBc/Hz at 1 MHz offset from the 2.2 GHz carrier at a supply voltage of only 0.5 V.

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KW - Ultra-Low-Power

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SN - 9781467325233

T3 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

BT - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

T2 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Y2 - 3 June 2013 through 5 June 2013

ER -

2-GHz band ultra-low-voltage LC-VCO IC in 130nm CMOS technology

Abstract

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Conference

Keywords

ASJC Scopus subject areas

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