2-GHz band ultra-low-voltage LC-VCO IC in 130nm CMOS technology

Xin Yang, Kangyang Xu, Wei Wang, Yorikatsu Uchida, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

An ultra-low-voltage LC-VCO IC has been demonstrated using 130nm CMOS technology. The LC-VCO IC includes a cross-coupled nMOSFET pair, a spiral inductor, MOS varactors and a buffer amplifier. The LC-VCO IC is designed, fabricated and fully evaluated on wafer. The VCO IC exhibits a phase noise of -137 dBc/Hz at 1 MHz offset from the 2.2 GHz carrier at a supply voltage of only 0.5 V.

Original languageEnglish
Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong
Duration: 2013 Jun 32013 Jun 5

Other

Other2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
CityHong Kong
Period13/6/313/6/5

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Keywords

  • LC-VCO
  • Low Phase Noise
  • Ultra-Low-Power

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Yang, X., Xu, K., Wang, W., Uchida, Y., & Yoshimasu, T. (2013). 2-GHz band ultra-low-voltage LC-VCO IC in 130nm CMOS technology. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628052] https://doi.org/10.1109/EDSSC.2013.6628052