2 W/mm output power density at 1 GHz for diamond FETs

M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, T. Makimoto

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Abstract

Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.

Original languageEnglish
Pages (from-to)1249-1250
Number of pages2
JournalElectronics Letters
Volume41
Issue number22
DOIs
Publication statusPublished - 2005 Dec 1

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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Kasu, M., Ueda, K., Ye, H., Yamauchi, Y., Sasaki, S., & Makimoto, T. (2005). 2 W/mm output power density at 1 GHz for diamond FETs. Electronics Letters, 41(22), 1249-1250. https://doi.org/10.1049/el:20053194