Abstract
Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.
Original language | English |
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Pages (from-to) | 1249-1250 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 41 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2005 Dec 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering