2 W/mm output power density at 1 GHz for diamond FETs

M. Kasu; K. Ueda; H. Ye; Y. Yamauchi; S. Sasaki; T. Makimoto

doi:10.1049/el:20053194

2 W/mm output power density at 1 GHz for diamond FETs

M. Kasu^*, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, T. Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

118 Citations (Scopus)

Abstract

Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.

Original language	English
Pages (from-to)	1249-1250
Number of pages	2
Journal	Electronics Letters
Volume	41
Issue number	22
DOIs	https://doi.org/10.1049/el:20053194
Publication status	Published - 2005 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20053194

Cite this

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abstract = "Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.",

author = "M. Kasu and K. Ueda and H. Ye and Y. Yamauchi and S. Sasaki and T. Makimoto",

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T1 - 2 W/mm output power density at 1 GHz for diamond FETs

AU - Kasu, M.

AU - Ueda, K.

AU - Ye, H.

AU - Yamauchi, Y.

AU - Sasaki, S.

AU - Makimoto, T.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.

AB - Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.

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JF - Electronics Letters

SN - 0013-5194

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ER -

2 W/mm output power density at 1 GHz for diamond FETs

Abstract

ASJC Scopus subject areas

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