Abstract
Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 1249-1250 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 41 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 2005 Dec 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Kasu, M., Ueda, K., Ye, H., Yamauchi, Y., Sasaki, S., & Makimoto, T. (2005). 2 W/mm output power density at 1 GHz for diamond FETs. Electronics Letters, 41(22), 1249-1250. https://doi.org/10.1049/el:20053194