2 W/mm output power density at 1 GHz for diamond FETs

M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, Toshiki Makimoto

Research output: Contribution to journalArticle

95 Citations (Scopus)

Abstract

Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.

Original languageEnglish
Pages (from-to)1249-1250
Number of pages2
JournalElectronics Letters
Volume41
Issue number22
DOIs
Publication statusPublished - 2005
Externally publishedYes

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Field effect transistors
Diamonds
Gases

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kasu, M., Ueda, K., Ye, H., Yamauchi, Y., Sasaki, S., & Makimoto, T. (2005). 2 W/mm output power density at 1 GHz for diamond FETs. Electronics Letters, 41(22), 1249-1250. https://doi.org/10.1049/el:20053194

2 W/mm output power density at 1 GHz for diamond FETs. / Kasu, M.; Ueda, K.; Ye, H.; Yamauchi, Y.; Sasaki, S.; Makimoto, Toshiki.

In: Electronics Letters, Vol. 41, No. 22, 2005, p. 1249-1250.

Research output: Contribution to journalArticle

Kasu, M, Ueda, K, Ye, H, Yamauchi, Y, Sasaki, S & Makimoto, T 2005, '2 W/mm output power density at 1 GHz for diamond FETs', Electronics Letters, vol. 41, no. 22, pp. 1249-1250. https://doi.org/10.1049/el:20053194
Kasu, M. ; Ueda, K. ; Ye, H. ; Yamauchi, Y. ; Sasaki, S. ; Makimoto, Toshiki. / 2 W/mm output power density at 1 GHz for diamond FETs. In: Electronics Letters. 2005 ; Vol. 41, No. 22. pp. 1249-1250.
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