A monolithic photoreceiver OEIC for λ = 1.55μm consisting of a waveguide pin photodiode and an InAlAs/InGaAs HEMT distributed amplifier has been fabricated using a single-step MOVPE growth technique. It has a 3dB-down frequency of 20GHz and operates at 20Gbit/s with a sensitivity of-10.4dBm.
- Integrated optoelectronics
- Optical receivers
ASJC Scopus subject areas
- Electrical and Electronic Engineering