(211) oriented ZnTe growth on m-plane sapphire by MBE

Taizo Nakasu, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 °C. When the layer was grown at 350 °C, the (211) oriented domain dominated the film.

    Original languageEnglish
    Pages (from-to)1381-1384
    Number of pages4
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume10
    Issue number11
    DOIs
    Publication statusPublished - 2013 Nov

    Fingerprint

    sapphire
    electro-optical effect
    poles
    molecular beam epitaxy
    detectors
    thin films
    diffraction
    x rays

    Keywords

    • Heteroepitaxy
    • Molecular beam epitaxy
    • Pole figure
    • Sapphire
    • ZnTe

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    (211) oriented ZnTe growth on m-plane sapphire by MBE. / Nakasu, Taizo; Kobayashi, Masakazu; Togo, Hiroyoshi; Asahi, Toshiaki.

    In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 10, No. 11, 11.2013, p. 1381-1384.

    Research output: Contribution to journalArticle

    Nakasu, Taizo ; Kobayashi, Masakazu ; Togo, Hiroyoshi ; Asahi, Toshiaki. / (211) oriented ZnTe growth on m-plane sapphire by MBE. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2013 ; Vol. 10, No. 11. pp. 1381-1384.
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