(211) oriented ZnTe growth on m-plane sapphire by MBE

Taizo Nakasu, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi

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    8 Citations (Scopus)

    Abstract

    Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 °C. When the layer was grown at 350 °C, the (211) oriented domain dominated the film.

    Original languageEnglish
    Pages (from-to)1381-1384
    Number of pages4
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume10
    Issue number11
    DOIs
    Publication statusPublished - 2013 Nov

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    Keywords

    • Heteroepitaxy
    • Molecular beam epitaxy
    • Pole figure
    • Sapphire
    • ZnTe

    ASJC Scopus subject areas

    • Condensed Matter Physics

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