25-GHz-band High Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor in 45-nm SOI CMOS

Tsuyoshi Sugiura, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a 2S-GHz-band high-efficiency power amplifier (P A) with a novel adaptively controlled gate capacitor circuit for 5th generation (5G) mobile terminal application in the 45-nm silicon on insulator (SOI) CMOS process. This novel gate capacitor circuit effectively controls the RF swing of each stacked FET to achieve high efficiency in the several-dB back-off region. The PA adopts a 4 stacked FET structure to increase the output power because of the low breakdown voltage issue of scaled MOS FETs. An adaptive bias circuit is employed for high linearity and high back-off efficiency. At a supply voltage of 4 V, the fabricated P A exhibited a saturated output power of 21.5 dBm, a peak power added efficiency (P AE) of 40.9%, a gain of 17.6 dB, and an ITRS FoM of 83.2 dB. The effective P A area was 0.55 mm by 0.4 mm.

Original languageEnglish
Title of host publication2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications, PAWR 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages26-28
Number of pages3
ISBN (Electronic)9781665434720
DOIs
Publication statusPublished - 2022
Event2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications, PAWR 2022 - Las Vegas, United States
Duration: 2022 Jan 162022 Jan 19

Publication series

Name2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications, PAWR 2022

Conference

Conference2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications, PAWR 2022
Country/TerritoryUnited States
CityLas Vegas
Period22/1/1622/1/19

Keywords

  • 5G
  • adaptive bias
  • adaptive gate capacitor
  • back-off efficiency
  • power amplifier
  • SOI CMOS
  • stacked-FET

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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