25-GHz-band High Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor in 45-nm SOI CMOS

Physics & Astronomy

• power amplifiers 100%
• CMOS 75%
• capacitors 73%
• field effect transistors 66%
• insulators 62%
• silicon 45%
• output 33%
• power efficiency 32%
• electrical faults 27%
• linearity 27%
• electric potential 15%

Engineering & Materials Science

• Field effect transistors 90%
• Power amplifiers 83%
• Capacitors 66%
• Silicon 66%
• Networks (circuits) 35%
• Electric breakdown 23%
• Electric potential 10%

Chemical Compounds

• Nonconductor 95%
• Capacitor 86%
• Voltage 30%
• Application 13%