25-ns 256K ×1/64K × 4 CMOS SRAM's

Shinpei Kayano; Katsuki Ichinose; Yoshio Kohno; Hirofumi Shinohara; Kenji Anami; Shuji Murakami; Tomohisa Wada; Yuji Kawai; Yoichi Akasaka

doi:10.1109/JSSC.1986.1052596

25-ns 256K ×1/64K × 4 CMOS SRAM's

Shinpei Kayano, Katsuki Ichinose, Yoshio Kohno, Hirofumi Shinohara, Kenji Anami, Shuji Murakami, Tomohisa Wada, Yuji Kawai, Yoichi Akasaka

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

This paper describes 25-ns 256K CMOS static RAM's (SRAM‘s). Through a metal option, either 256K word × 1-bit or 64K word×4-bit organization is obtained. A fast access time has been achieved with a short bit-line structure and a data-bus precharging technique which minimize the bit-line and data-bus delay. A feedback-controlled address transition detector (ATD) circuit has been adopted to assure the fast access time in the presence of address skew. A 1.0-µm double-polysilicon and single-metal process technology with polycide gate offers a memory cell size of 90 µm2 and a chip size of 47.4 mm2.

Original language	English
Pages (from-to)	686-691
Number of pages	6
Journal	IEEE Journal of Solid-State Circuits
Volume	21
Issue number	5
DOIs	https://doi.org/10.1109/JSSC.1986.1052596
Publication status	Published - 1986 Oct
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/JSSC.1986.1052596

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title = "25-ns 256K ×1/64K × 4 CMOS SRAM's",

abstract = "This paper describes 25-ns 256K CMOS static RAM's (SRAM{\textquoteleft}s). Through a metal option, either 256K word × 1-bit or 64K word×4-bit organization is obtained. A fast access time has been achieved with a short bit-line structure and a data-bus precharging technique which minimize the bit-line and data-bus delay. A feedback-controlled address transition detector (ATD) circuit has been adopted to assure the fast access time in the presence of address skew. A 1.0-µm double-polysilicon and single-metal process technology with polycide gate offers a memory cell size of 90 µm2 and a chip size of 47.4 mm2.",

author = "Shinpei Kayano and Katsuki Ichinose and Yoshio Kohno and Hirofumi Shinohara and Kenji Anami and Shuji Murakami and Tomohisa Wada and Yuji Kawai and Yoichi Akasaka",

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doi = "10.1109/JSSC.1986.1052596",

language = "English",

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pages = "686--691",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - 25-ns 256K ×1/64K × 4 CMOS SRAM's

AU - Kayano, Shinpei

AU - Ichinose, Katsuki

AU - Kohno, Yoshio

AU - Shinohara, Hirofumi

AU - Anami, Kenji

AU - Murakami, Shuji

AU - Wada, Tomohisa

AU - Kawai, Yuji

AU - Akasaka, Yoichi

PY - 1986/10

Y1 - 1986/10

N2 - This paper describes 25-ns 256K CMOS static RAM's (SRAM‘s). Through a metal option, either 256K word × 1-bit or 64K word×4-bit organization is obtained. A fast access time has been achieved with a short bit-line structure and a data-bus precharging technique which minimize the bit-line and data-bus delay. A feedback-controlled address transition detector (ATD) circuit has been adopted to assure the fast access time in the presence of address skew. A 1.0-µm double-polysilicon and single-metal process technology with polycide gate offers a memory cell size of 90 µm2 and a chip size of 47.4 mm2.

AB - This paper describes 25-ns 256K CMOS static RAM's (SRAM‘s). Through a metal option, either 256K word × 1-bit or 64K word×4-bit organization is obtained. A fast access time has been achieved with a short bit-line structure and a data-bus precharging technique which minimize the bit-line and data-bus delay. A feedback-controlled address transition detector (ATD) circuit has been adopted to assure the fast access time in the presence of address skew. A 1.0-µm double-polysilicon and single-metal process technology with polycide gate offers a memory cell size of 90 µm2 and a chip size of 47.4 mm2.

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25-ns 256K ×1/64K × 4 CMOS SRAM's

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