300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique

Kosuke Katayama; S. Amakawa; K. Takano; M. Fujishima

doi:10.1109/MWSYM.2015.7167118

300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique

Kosuke Katayama, S. Amakawa, K. Takano, M. Fujishima

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Abstract

This paper proposes an improved cold-bias de-embedding technique that properly separates the bias-independent parasitics from the bias-dependent core MOSFET characteristics. This is accomplished by considering possible discrepancy between dc and high-frequency I-V characteristics. It makes the core MOSFET model very simple. A 32-μm-wide common-source MOSFET fabricated in a 65 nm LP CMOS process is successfully modeled up to 330 GHz.

Original language	English
Title of host publication	2015 IEEE MTT-S International Microwave Symposium, IMS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479982752
DOIs	https://doi.org/10.1109/MWSYM.2015.7167118
Publication status	Published - 2015 Jul 24
Externally published	Yes
Event	IEEE MTT-S International Microwave Symposium, IMS 2015 - Phoenix, United States Duration: 2015 May 17 → 2015 May 22

Other

Other	IEEE MTT-S International Microwave Symposium, IMS 2015
Country/Territory	United States
City	Phoenix
Period	15/5/17 → 15/5/22

Keywords

J-band
millimeter-wave
modeling
MOSFET

ASJC Scopus subject areas

Computer Networks and Communications
Signal Processing
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2015.7167118

Cite this

Katayama, K, Amakawa, S, Takano, K & Fujishima, M 2015, 300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique. in 2015 IEEE MTT-S International Microwave Symposium, IMS 2015., 7167118, Institute of Electrical and Electronics Engineers Inc., IEEE MTT-S International Microwave Symposium, IMS 2015, Phoenix, United States, 15/5/17. https://doi.org/10.1109/MWSYM.2015.7167118

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abstract = "This paper proposes an improved cold-bias de-embedding technique that properly separates the bias-independent parasitics from the bias-dependent core MOSFET characteristics. This is accomplished by considering possible discrepancy between dc and high-frequency I-V characteristics. It makes the core MOSFET model very simple. A 32-μm-wide common-source MOSFET fabricated in a 65 nm LP CMOS process is successfully modeled up to 330 GHz.",

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AU - Amakawa, S.

AU - Takano, K.

AU - Fujishima, M.

PY - 2015/7/24

Y1 - 2015/7/24

N2 - This paper proposes an improved cold-bias de-embedding technique that properly separates the bias-independent parasitics from the bias-dependent core MOSFET characteristics. This is accomplished by considering possible discrepancy between dc and high-frequency I-V characteristics. It makes the core MOSFET model very simple. A 32-μm-wide common-source MOSFET fabricated in a 65 nm LP CMOS process is successfully modeled up to 330 GHz.

AB - This paper proposes an improved cold-bias de-embedding technique that properly separates the bias-independent parasitics from the bias-dependent core MOSFET characteristics. This is accomplished by considering possible discrepancy between dc and high-frequency I-V characteristics. It makes the core MOSFET model very simple. A 32-μm-wide common-source MOSFET fabricated in a 65 nm LP CMOS process is successfully modeled up to 330 GHz.

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KW - millimeter-wave

KW - modeling

KW - MOSFET

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M3 - Conference contribution

AN - SCOPUS:84946019025

BT - 2015 IEEE MTT-S International Microwave Symposium, IMS 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE MTT-S International Microwave Symposium, IMS 2015

Y2 - 17 May 2015 through 22 May 2015

ER -

300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique

Abstract

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Keywords

ASJC Scopus subject areas

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