300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique

Kosuke Katayama, S. Amakawa, K. Takano, M. Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

This paper proposes an improved cold-bias de-embedding technique that properly separates the bias-independent parasitics from the bias-dependent core MOSFET characteristics. This is accomplished by considering possible discrepancy between dc and high-frequency I-V characteristics. It makes the core MOSFET model very simple. A 32-μm-wide common-source MOSFET fabricated in a 65 nm LP CMOS process is successfully modeled up to 330 GHz.

Original languageEnglish
Title of host publication2015 IEEE MTT-S International Microwave Symposium, IMS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479982752
DOIs
Publication statusPublished - 2015 Jul 24
Externally publishedYes
EventIEEE MTT-S International Microwave Symposium, IMS 2015 - Phoenix, United States
Duration: 2015 May 172015 May 22

Other

OtherIEEE MTT-S International Microwave Symposium, IMS 2015
CountryUnited States
CityPhoenix
Period15/5/1715/5/22

Keywords

  • J-band
  • millimeter-wave
  • modeling
  • MOSFET

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Signal Processing
  • Electrical and Electronic Engineering

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