300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al2O3Gate Insulator

Yu Fu, Yu Hao Chang, Xiaohua Zhu, Atsushi Hiraiwa, Ruimin Xu, Yuehang Xu, Hiroshi Kawarada*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, high-performance normally-off oxidized Si-terminated (C-Si) diamond metal-oxide- semiconductor field-effect transistors (MOSFETs) have been achieved using (111) diamond and Al2O3 gate insulator with maximum drain current density (ID_MAX) up to 300 mA/mm, which is a record value among Enhancement-mode single crystalline diamond devices to date. During selective growth of heavily-boron-doped (p++)-diamond MOSFETs utilizing a SiO2 mask, carbon-silicon bonding was established at SiO2/diamond interface. C-Si diamond MOSFET will be a promising candidate for fulfilling the requirements of high output capability and safety operation in some power device applications.

Original languageEnglish
Title of host publication2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages121-124
Number of pages4
ISBN (Electronic)9781665422017
DOIs
Publication statusPublished - 2022
Event34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 - Vancouver, Canada
Duration: 2022 May 222022 May 25

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2022-May
ISSN (Print)1063-6854

Conference

Conference34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
Country/TerritoryCanada
CityVancouver
Period22/5/2222/5/25

Keywords

  • Diamond
  • MOSFETs
  • Normally-off
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)

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