300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al2O3Gate Insulator

Yu Fu, Yu Hao Chang, Xiaohua Zhu, Atsushi Hiraiwa, Ruimin Xu, Yuehang Xu, Hiroshi Kawarada*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science