We fabricated a 5-µm-long active region DBR laser integrated with a spot-size convertor on a SiO2/Si substrate. The device exhibits a threshold current of 51 µA, maximum fiber coupled output power of 76 µW, and 38-fJ/bit energy cost with 25.8-Gbit/s NRZ signal modulation.
|Journal||Conference Digest - IEEE International Semiconductor Laser Conference|
|Publication status||Published - 2021|
|Event||27th International Semiconductor Laser Conference, ISLC 2021 - Potsdam, Germany|
Duration: 2021 Oct 10 → 2021 Oct 14
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering