38-fJ/bit Direct Modulation of a 5-µm-long Active Region Membrane DBR Laser on SiO2/Si Substrate

Erina Kanno; Koji Takeda; Takuro Fujii; Takaaki Kakitsuka; Shinji Matsuo

doi:10.1109/ISLC51662.2021.9615835

38-fJ/bit Direct Modulation of a 5-µm-long Active Region Membrane DBR Laser on SiO₂/Si Substrate

Erina Kanno^*, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo

^*Corresponding author for this work

Graduate School of Information, Production and Systems

Research output: Contribution to journal › Conference article › peer-review

Abstract

We fabricated a 5-µm-long active region DBR laser integrated with a spot-size convertor on a SiO2/Si substrate. The device exhibits a threshold current of 51 µA, maximum fiber coupled output power of 76 µW, and 38-fJ/bit energy cost with 25.8-Gbit/s NRZ signal modulation.

Original language	English
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
DOIs	https://doi.org/10.1109/ISLC51662.2021.9615835
Publication status	Published - 2021
Event	27th International Semiconductor Laser Conference, ISLC 2021 - Potsdam, Germany Duration: 2021 Oct 10 → 2021 Oct 14

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/ISLC51662.2021.9615835

Cite this

@article{a6fe531c42524f228fc2a20a2127d95a,

title = "38-fJ/bit Direct Modulation of a 5-µm-long Active Region Membrane DBR Laser on SiO2/Si Substrate",

abstract = "We fabricated a 5-µm-long active region DBR laser integrated with a spot-size convertor on a SiO2/Si substrate. The device exhibits a threshold current of 51 µA, maximum fiber coupled output power of 76 µW, and 38-fJ/bit energy cost with 25.8-Gbit/s NRZ signal modulation.",

author = "Erina Kanno and Koji Takeda and Takuro Fujii and Takaaki Kakitsuka and Shinji Matsuo",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 27th International Semiconductor Laser Conference, ISLC 2021 ; Conference date: 10-10-2021 Through 14-10-2021",

year = "2021",

doi = "10.1109/ISLC51662.2021.9615835",

language = "English",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

issn = "0899-9406",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - 38-fJ/bit Direct Modulation of a 5-µm-long Active Region Membrane DBR Laser on SiO2/Si Substrate

AU - Kanno, Erina

AU - Takeda, Koji

AU - Fujii, Takuro

AU - Kakitsuka, Takaaki

AU - Matsuo, Shinji

PY - 2021

Y1 - 2021

N2 - We fabricated a 5-µm-long active region DBR laser integrated with a spot-size convertor on a SiO2/Si substrate. The device exhibits a threshold current of 51 µA, maximum fiber coupled output power of 76 µW, and 38-fJ/bit energy cost with 25.8-Gbit/s NRZ signal modulation.

AB - We fabricated a 5-µm-long active region DBR laser integrated with a spot-size convertor on a SiO2/Si substrate. The device exhibits a threshold current of 51 µA, maximum fiber coupled output power of 76 µW, and 38-fJ/bit energy cost with 25.8-Gbit/s NRZ signal modulation.

UR - http://www.scopus.com/inward/record.url?scp=85122867911&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85122867911&partnerID=8YFLogxK

U2 - 10.1109/ISLC51662.2021.9615835

DO - 10.1109/ISLC51662.2021.9615835

M3 - Conference article

AN - SCOPUS:85122867911

SN - 0899-9406

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

T2 - 27th International Semiconductor Laser Conference, ISLC 2021

Y2 - 10 October 2021 through 14 October 2021

ER -

38-fJ/bit Direct Modulation of a 5-µm-long Active Region Membrane DBR Laser on SiO₂/Si Substrate

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this