3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity

Shoichiro Imanishi, Kiyotaka Horikawa, Nobutaka Oi, Satoshi Okubo, Taisuke Kageura, Atsushi Hiraiwa, Hiroshi Kawarada

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Fingerprint

Dive into the research topics of '3.8 W/mm RF Power Density for ALD Al<sub>2</sub>O<sub>3</sub>-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity'. Together they form a unique fingerprint.

Engineering & Materials Science

Chemical Compounds