39% access time improvement, 11% energy reduction, 32 kbit 1-read/1-write 2-port static random-access memory using two-stage read boost and write-boost after read sensing scheme

Yasue Yamamoto, Shinichi Moriwaki, Atsushi Kawasumi, Shinji Miyano, Hirofumi Shinohara

Research output: Contribution to journalArticle


We propose novel circuit techniques for 1 clock (1CLK) 1 read/1 write (1R/1W) 2-port static random-access memories (SRAMs) to improve read access time (tAC) and write margins at low voltages. Two-stage read boost (TSR-BST) and write word line boost (WWL-BST) after the read sensing schemes have been proposed. TSR-BST reduces the worst read bit line (RBL) delay by 61% and RBL amplitude by 10% at VDD = 0.5 V, which improves tAC by 39% and reduces energy dissipation by 11% at VDD = 0.55V. WWL-BST after read sensing scheme improves minimum operating voltage (Vmin) by 140mV. A 32 kbit 1CLK 1R/1W 2-port SRAM with TSR-BSTand WWL-BST has been developed using a 40 nm CMOS.

Original languageEnglish
Article number04EF13
JournalJapanese Journal of Applied Physics
Issue number4
Publication statusPublished - 2016 Apr 1


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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