TY - JOUR
T1 - 39% access time improvement, 11% energy reduction, 32 kbit 1-read/1-write 2-port static random-access memory using two-stage read boost and write-boost after read sensing scheme
AU - Yamamoto, Yasue
AU - Moriwaki, Shinichi
AU - Kawasumi, Atsushi
AU - Miyano, Shinji
AU - Shinohara, Hirofumi
PY - 2016/4
Y1 - 2016/4
N2 - We propose novel circuit techniques for 1 clock (1CLK) 1 read/1 write (1R/1W) 2-port static random-access memories (SRAMs) to improve read access time (tAC) and write margins at low voltages. Two-stage read boost (TSR-BST) and write word line boost (WWL-BST) after the read sensing schemes have been proposed. TSR-BST reduces the worst read bit line (RBL) delay by 61% and RBL amplitude by 10% at VDD = 0.5 V, which improves tAC by 39% and reduces energy dissipation by 11% at VDD = 0.55V. WWL-BST after read sensing scheme improves minimum operating voltage (Vmin) by 140mV. A 32 kbit 1CLK 1R/1W 2-port SRAM with TSR-BSTand WWL-BST has been developed using a 40 nm CMOS.
AB - We propose novel circuit techniques for 1 clock (1CLK) 1 read/1 write (1R/1W) 2-port static random-access memories (SRAMs) to improve read access time (tAC) and write margins at low voltages. Two-stage read boost (TSR-BST) and write word line boost (WWL-BST) after the read sensing schemes have been proposed. TSR-BST reduces the worst read bit line (RBL) delay by 61% and RBL amplitude by 10% at VDD = 0.5 V, which improves tAC by 39% and reduces energy dissipation by 11% at VDD = 0.55V. WWL-BST after read sensing scheme improves minimum operating voltage (Vmin) by 140mV. A 32 kbit 1CLK 1R/1W 2-port SRAM with TSR-BSTand WWL-BST has been developed using a 40 nm CMOS.
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U2 - 10.7567/JJAP.55.04EF13
DO - 10.7567/JJAP.55.04EF13
M3 - Article
AN - SCOPUS:84963682352
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4
M1 - 04EF13
ER -