4-MBIT DRAM WITH FOLDED-BIT-LINE ADAPTIVE SIDEWALL-ISOLATED CAPACITOR (FASIC) CELL.

Koichiro Mashiko*, Masao Nagatomo, Kazutami Arimoto, Yoshio Matsuda, Kiyohiro Furutani, Takayuki Matsukawa, Michihiro Yamada, Tsutomu Yoshihara, Takao Nakano

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

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Engineering & Materials Science