Abstract
We fabricate a lateral current injection DFB laser on SiO2/Si substrate by combining direct bonding and epitaxial regrowth techniques. The device is directly modulated by 40-Gbit/s NRZ signal with a bias current of 15 mA.
| Original language | English |
|---|---|
| Title of host publication | Conference Digest - IEEE International Semiconductor Laser Conference |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 30-31 |
| Number of pages | 2 |
| ISBN (Electronic) | 9781479957217 |
| DOIs | |
| Publication status | Published - 2014 Dec 16 |
| Externally published | Yes |
| Event | 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 - Palma de Mallorca, Spain Duration: 2014 Sep 7 → 2014 Sep 10 |
Publication series
| Name | Conference Digest - IEEE International Semiconductor Laser Conference |
|---|---|
| ISSN (Print) | 0899-9406 |
Other
| Other | 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 |
|---|---|
| Country | Spain |
| City | Palma de Mallorca |
| Period | 14/9/7 → 14/9/10 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Fingerprint Dive into the research topics of '40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate'. Together they form a unique fingerprint.
Cite this
Matsuo, S., Fujii, T., Hasebe, K., Takeda, K., Sato, T., & Kakitsuka, T. (2014). 40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 30-31). [6987435] (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2014.148