Abstract
We fabricate a lateral current injection DFB laser on SiO2/Si substrate by combining direct bonding and epitaxial regrowth techniques. The device is directly modulated by 40-Gbit/s NRZ signal with a bias current of 15 mA.
Original language | English |
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Title of host publication | Conference Digest - IEEE International Semiconductor Laser Conference |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 30-31 |
Number of pages | 2 |
ISBN (Electronic) | 9781479957217 |
DOIs | |
Publication status | Published - 2014 Dec 16 |
Externally published | Yes |
Event | 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 - Palma de Mallorca, Spain Duration: 2014 Sep 7 → 2014 Sep 10 |
Publication series
Name | Conference Digest - IEEE International Semiconductor Laser Conference |
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ISSN (Print) | 0899-9406 |
Other
Other | 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 |
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Country | Spain |
City | Palma de Mallorca |
Period | 14/9/7 → 14/9/10 |
Fingerprint
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate. / Matsuo, Shinji; Fujii, Takuro; Hasebe, Koichi; Takeda, Koji; Sato, Tomonari; Kakitsuka, Takaaki.
Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 30-31 6987435 (Conference Digest - IEEE International Semiconductor Laser Conference).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - 40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate
AU - Matsuo, Shinji
AU - Fujii, Takuro
AU - Hasebe, Koichi
AU - Takeda, Koji
AU - Sato, Tomonari
AU - Kakitsuka, Takaaki
PY - 2014/12/16
Y1 - 2014/12/16
N2 - We fabricate a lateral current injection DFB laser on SiO2/Si substrate by combining direct bonding and epitaxial regrowth techniques. The device is directly modulated by 40-Gbit/s NRZ signal with a bias current of 15 mA.
AB - We fabricate a lateral current injection DFB laser on SiO2/Si substrate by combining direct bonding and epitaxial regrowth techniques. The device is directly modulated by 40-Gbit/s NRZ signal with a bias current of 15 mA.
UR - http://www.scopus.com/inward/record.url?scp=84920144570&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84920144570&partnerID=8YFLogxK
U2 - 10.1109/ISLC.2014.148
DO - 10.1109/ISLC.2014.148
M3 - Conference contribution
AN - SCOPUS:84920144570
T3 - Conference Digest - IEEE International Semiconductor Laser Conference
SP - 30
EP - 31
BT - Conference Digest - IEEE International Semiconductor Laser Conference
PB - Institute of Electrical and Electronics Engineers Inc.
ER -