40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate

Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We fabricate a lateral current injection DFB laser on SiO2/Si substrate by combining direct bonding and epitaxial regrowth techniques. The device is directly modulated by 40-Gbit/s NRZ signal with a bias current of 15 mA.

Original languageEnglish
Title of host publicationConference Digest - IEEE International Semiconductor Laser Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages30-31
Number of pages2
ISBN (Electronic)9781479957217
DOIs
Publication statusPublished - 2014 Dec 16
Externally publishedYes
Event2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 - Palma de Mallorca, Spain
Duration: 2014 Sep 72014 Sep 10

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Other

Other2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014
CountrySpain
CityPalma de Mallorca
Period14/9/714/9/10

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of '40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate'. Together they form a unique fingerprint.

  • Cite this

    Matsuo, S., Fujii, T., Hasebe, K., Takeda, K., Sato, T., & Kakitsuka, T. (2014). 40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 30-31). [6987435] (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2014.148