40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate

Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We fabricate a lateral current injection DFB laser on SiO2/Si substrate by combining direct bonding and epitaxial regrowth techniques. The device is directly modulated by 40-Gbit/s NRZ signal with a bias current of 15 mA.

Original languageEnglish
Title of host publicationConference Digest - IEEE International Semiconductor Laser Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages30-31
Number of pages2
ISBN (Electronic)9781479957217
DOIs
Publication statusPublished - 2014 Dec 16
Externally publishedYes
Event2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 - Palma de Mallorca, Spain
Duration: 2014 Sep 7 → 2014 Sep 10

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Other

Other2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014
CountrySpain
CityPalma de Mallorca
Period14/9/7 → 14/9/10

Fingerprint

Bias currents
Distributed feedback lasers
Heterojunctions
Modulation
membranes
Membranes
modulation
injection lasers
Substrates
lasers

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Matsuo, S., Fujii, T., Hasebe, K., Takeda, K., Sato, T., & Kakitsuka, T. (2014). 40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 30-31). [6987435] (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2014.148

40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate. / Matsuo, Shinji; Fujii, Takuro; Hasebe, Koichi; Takeda, Koji; Sato, Tomonari; Kakitsuka, Takaaki.

Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 30-31 6987435 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsuo, S, Fujii, T, Hasebe, K, Takeda, K, Sato, T & Kakitsuka, T 2014, 40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate. in Conference Digest - IEEE International Semiconductor Laser Conference., 6987435, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., pp. 30-31, 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014, Palma de Mallorca, Spain, 14/9/7. https://doi.org/10.1109/ISLC.2014.148
Matsuo S, Fujii T, Hasebe K, Takeda K, Sato T, Kakitsuka T. 40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate. In Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 30-31. 6987435. (Conference Digest - IEEE International Semiconductor Laser Conference). https://doi.org/10.1109/ISLC.2014.148
Matsuo, Shinji ; Fujii, Takuro ; Hasebe, Koichi ; Takeda, Koji ; Sato, Tomonari ; Kakitsuka, Takaaki. / 40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate. Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 30-31 (Conference Digest - IEEE International Semiconductor Laser Conference).
@inproceedings{16eb488404194a1888cbf591c0a5dd7b,
title = "40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate",
abstract = "We fabricate a lateral current injection DFB laser on SiO2/Si substrate by combining direct bonding and epitaxial regrowth techniques. The device is directly modulated by 40-Gbit/s NRZ signal with a bias current of 15 mA.",
author = "Shinji Matsuo and Takuro Fujii and Koichi Hasebe and Koji Takeda and Tomonari Sato and Takaaki Kakitsuka",
year = "2014",
month = "12",
day = "16",
doi = "10.1109/ISLC.2014.148",
language = "English",
series = "Conference Digest - IEEE International Semiconductor Laser Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "30--31",
booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",

}

TY - GEN

T1 - 40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate

AU - Matsuo, Shinji

AU - Fujii, Takuro

AU - Hasebe, Koichi

AU - Takeda, Koji

AU - Sato, Tomonari

AU - Kakitsuka, Takaaki

PY - 2014/12/16

Y1 - 2014/12/16

N2 - We fabricate a lateral current injection DFB laser on SiO2/Si substrate by combining direct bonding and epitaxial regrowth techniques. The device is directly modulated by 40-Gbit/s NRZ signal with a bias current of 15 mA.

AB - We fabricate a lateral current injection DFB laser on SiO2/Si substrate by combining direct bonding and epitaxial regrowth techniques. The device is directly modulated by 40-Gbit/s NRZ signal with a bias current of 15 mA.

UR - http://www.scopus.com/inward/record.url?scp=84920144570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84920144570&partnerID=8YFLogxK

U2 - 10.1109/ISLC.2014.148

DO - 10.1109/ISLC.2014.148

M3 - Conference contribution

AN - SCOPUS:84920144570

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 30

EP - 31

BT - Conference Digest - IEEE International Semiconductor Laser Conference

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

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