46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier

Kiyoto Takahata, Y. Muramoto, H. Fukano, K. Kato, A. Kozen, O. Nakajima, Y. Matsuoka

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.

Original languageEnglish
Pages (from-to)1150-1152
Number of pages3
JournalIEEE Photonics Technology Letters
Volume10
Issue number8
DOIs
Publication statusPublished - 1998 Aug
Externally publishedYes

Fingerprint

transistor amplifiers
distributed amplifiers
Integrated optoelectronics
High electron mobility transistors
Photodiodes
high electron mobility transistors
photodiodes
integrated circuits
Waveguides
receivers
Naphazoline
waveguides
bandwidth
Bandwidth
Wavelength
Vapor phase epitaxy
Radio systems
Light transmission
Millimeter waves
vapor phase epitaxy

Keywords

  • Distributed amplifiers
  • High-speed circuits/devices
  • MODFET's
  • Monolithic integrated circuits
  • Optical receivers
  • Optoelectronic devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier. / Takahata, Kiyoto; Muramoto, Y.; Fukano, H.; Kato, K.; Kozen, A.; Nakajima, O.; Matsuoka, Y.

In: IEEE Photonics Technology Letters, Vol. 10, No. 8, 08.1998, p. 1150-1152.

Research output: Contribution to journalArticle

Takahata, Kiyoto ; Muramoto, Y. ; Fukano, H. ; Kato, K. ; Kozen, A. ; Nakajima, O. ; Matsuoka, Y. / 46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier. In: IEEE Photonics Technology Letters. 1998 ; Vol. 10, No. 8. pp. 1150-1152.
@article{eefa7c6d131b41209b3c5172dfd42413,
title = "46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier",
abstract = "A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.",
keywords = "Distributed amplifiers, High-speed circuits/devices, MODFET's, Monolithic integrated circuits, Optical receivers, Optoelectronic devices",
author = "Kiyoto Takahata and Y. Muramoto and H. Fukano and K. Kato and A. Kozen and O. Nakajima and Y. Matsuoka",
year = "1998",
month = "8",
doi = "10.1109/68.701532",
language = "English",
volume = "10",
pages = "1150--1152",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

TY - JOUR

T1 - 46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier

AU - Takahata, Kiyoto

AU - Muramoto, Y.

AU - Fukano, H.

AU - Kato, K.

AU - Kozen, A.

AU - Nakajima, O.

AU - Matsuoka, Y.

PY - 1998/8

Y1 - 1998/8

N2 - A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.

AB - A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.

KW - Distributed amplifiers

KW - High-speed circuits/devices

KW - MODFET's

KW - Monolithic integrated circuits

KW - Optical receivers

KW - Optoelectronic devices

UR - http://www.scopus.com/inward/record.url?scp=0032138888&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032138888&partnerID=8YFLogxK

U2 - 10.1109/68.701532

DO - 10.1109/68.701532

M3 - Article

AN - SCOPUS:0032138888

VL - 10

SP - 1150

EP - 1152

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 8

ER -