5-GHz band linear CMOS power amplifier IC with a novel integrated linearizer for WLAN applications

Yorikatsu Uchida, Shihai He, Xin Yang, Qing Liu, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

In this paper, novel linearization technique is proposed to realize a 5-GHz band linear CMOS power amplifier IC for WLAN application. The novel linearizer which consists of a diode-connected PMOS bias circuit and a PMOS varactor connected in parallel with an NMOS amplifier is effectively to suppress the gain compression and phase distortion of the power amplifier. A CMOS power amplifier IC is designed, fabricated and fully tested using TSMC 0.13-μπι CMOS technology. With these proposed techniques, the measurement results show a third-order IMD improvement of 9 dB over wide output power range and the maximum improvement of 18 dB. The power amplifier IC exhibits an output PldB of 19.5 dBm and a power gain of 9.5 dB at an operation voltage of 3.3 V.

Original languageEnglish
Title of host publicationProceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012
Pages240-242
Number of pages3
DOIs
Publication statusPublished - 2012
Event2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 - Singapore
Duration: 2012 Nov 212012 Nov 23

Other

Other2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012
CitySingapore
Period12/11/2112/11/23

Fingerprint

Wireless local area networks (WLAN)
Power amplifiers
Varactors
Linearization
Diodes
Networks (circuits)
Electric potential

ASJC Scopus subject areas

  • Computer Networks and Communications

Cite this

Uchida, Y., He, S., Yang, X., Liu, Q., & Yoshimasu, T. (2012). 5-GHz band linear CMOS power amplifier IC with a novel integrated linearizer for WLAN applications. In Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 (pp. 240-242). [6401673] https://doi.org/10.1109/RFIT.2012.6401673

5-GHz band linear CMOS power amplifier IC with a novel integrated linearizer for WLAN applications. / Uchida, Yorikatsu; He, Shihai; Yang, Xin; Liu, Qing; Yoshimasu, Toshihiko.

Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012. 2012. p. 240-242 6401673.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uchida, Y, He, S, Yang, X, Liu, Q & Yoshimasu, T 2012, 5-GHz band linear CMOS power amplifier IC with a novel integrated linearizer for WLAN applications. in Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012., 6401673, pp. 240-242, 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012, Singapore, 12/11/21. https://doi.org/10.1109/RFIT.2012.6401673
Uchida Y, He S, Yang X, Liu Q, Yoshimasu T. 5-GHz band linear CMOS power amplifier IC with a novel integrated linearizer for WLAN applications. In Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012. 2012. p. 240-242. 6401673 https://doi.org/10.1109/RFIT.2012.6401673
Uchida, Yorikatsu ; He, Shihai ; Yang, Xin ; Liu, Qing ; Yoshimasu, Toshihiko. / 5-GHz band linear CMOS power amplifier IC with a novel integrated linearizer for WLAN applications. Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012. 2012. pp. 240-242
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