5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications

Xin Yang, Tsuyoshi Sugiura, Norihisa Otani, Tadamasa Murakami, Eiichiro Otobe, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a highly linear 5-GHz band power amplifier IC with integrated novel CMOS active bias circuit in SiGe BiCMOS technology for wireless LAN applications. The power amplifier IC consists of three-stage amplifier, the CMOS active bias circuit for linearizing SiGe HBT and all matching circuits. The power amplifier IC has exhibited a measured output power of 17.0 dBm, an EVM of 0.9 % and a dc current consumption of 284 mA under 54 Mbps OFDM signal at 5.4 GHz.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1372-1375
Number of pages4
ISBN (Print)9782874870354
DOIs
Publication statusPublished - 2014 Dec 15
Event2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 - Rome, Italy
Duration: 2014 Oct 62014 Oct 9

Other

Other2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
CountryItaly
CityRome
Period14/10/614/10/9

Keywords

  • CMOS active bias circuit
  • Linear power amplifier
  • SiGe BiCMOS
  • WLAN

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of '5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications'. Together they form a unique fingerprint.

Cite this