Abstract
Importance of fine pitch bonding technology for high-density assembly of semi-conductor devices is increasing in the background of rapidly advancing downsizing and performance enhancement of the devices. Presently, the wire bonding method is dominant as a method of electric interconnection between pad electrodes on Si chip and external electrodes, wherein demands are increasing for connection in narrower pitches between adjacent wires. 70 μm-pitch bonding has been applied to mass-produced devices and 40 μm-pitch bonding is expected to come to commercial use by 2005. This paper describes technology developments of 50 μm-pitch bonding involving high strength thin bonding wire, optimum relationship between the capillary shape and ball diameter, optimization of bonding conditions, etc.
| Original language | English |
|---|---|
| Pages (from-to) | 24-29 |
| Number of pages | 6 |
| Journal | Nippon Steel Technical Report |
| Issue number | 84 |
| Publication status | Published - 2001 Jul |
| Externally published | Yes |
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ASJC Scopus subject areas
- Metals and Alloys
Cite this
50 μm fine pitch ball bonding technology. / Uno, Tomohiro; Kitamura, Osamu; Terashima, Shinichi; Tatsumi, Kohei.
In: Nippon Steel Technical Report, No. 84, 07.2001, p. 24-29.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - 50 μm fine pitch ball bonding technology
AU - Uno, Tomohiro
AU - Kitamura, Osamu
AU - Terashima, Shinichi
AU - Tatsumi, Kohei
PY - 2001/7
Y1 - 2001/7
N2 - Importance of fine pitch bonding technology for high-density assembly of semi-conductor devices is increasing in the background of rapidly advancing downsizing and performance enhancement of the devices. Presently, the wire bonding method is dominant as a method of electric interconnection between pad electrodes on Si chip and external electrodes, wherein demands are increasing for connection in narrower pitches between adjacent wires. 70 μm-pitch bonding has been applied to mass-produced devices and 40 μm-pitch bonding is expected to come to commercial use by 2005. This paper describes technology developments of 50 μm-pitch bonding involving high strength thin bonding wire, optimum relationship between the capillary shape and ball diameter, optimization of bonding conditions, etc.
AB - Importance of fine pitch bonding technology for high-density assembly of semi-conductor devices is increasing in the background of rapidly advancing downsizing and performance enhancement of the devices. Presently, the wire bonding method is dominant as a method of electric interconnection between pad electrodes on Si chip and external electrodes, wherein demands are increasing for connection in narrower pitches between adjacent wires. 70 μm-pitch bonding has been applied to mass-produced devices and 40 μm-pitch bonding is expected to come to commercial use by 2005. This paper describes technology developments of 50 μm-pitch bonding involving high strength thin bonding wire, optimum relationship between the capillary shape and ball diameter, optimization of bonding conditions, etc.
UR - http://www.scopus.com/inward/record.url?scp=0035401570&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035401570&partnerID=8YFLogxK
M3 - Article
SP - 24
EP - 29
JO - Nippon Steel Technical Report
JF - Nippon Steel Technical Report
SN - 0300-306X
IS - 84
ER -