50 μm fine pitch ball bonding technology

Tomohiro Uno, Osamu Kitamura, Shinichi Terashima, Kohei Tatsumi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Importance of fine pitch bonding technology for high-density assembly of semi-conductor devices is increasing in the background of rapidly advancing downsizing and performance enhancement of the devices. Presently, the wire bonding method is dominant as a method of electric interconnection between pad electrodes on Si chip and external electrodes, wherein demands are increasing for connection in narrower pitches between adjacent wires. 70 μm-pitch bonding has been applied to mass-produced devices and 40 μm-pitch bonding is expected to come to commercial use by 2005. This paper describes technology developments of 50 μm-pitch bonding involving high strength thin bonding wire, optimum relationship between the capillary shape and ball diameter, optimization of bonding conditions, etc.

Original languageEnglish
Pages (from-to)24-29
Number of pages6
JournalNippon Steel Technical Report
Issue number84
Publication statusPublished - 2001 Jul
Externally publishedYes

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Wire
Electrodes
Semiconductor devices

ASJC Scopus subject areas

  • Metals and Alloys

Cite this

Uno, T., Kitamura, O., Terashima, S., & Tatsumi, K. (2001). 50 μm fine pitch ball bonding technology. Nippon Steel Technical Report, (84), 24-29.

50 μm fine pitch ball bonding technology. / Uno, Tomohiro; Kitamura, Osamu; Terashima, Shinichi; Tatsumi, Kohei.

In: Nippon Steel Technical Report, No. 84, 07.2001, p. 24-29.

Research output: Contribution to journalArticle

Uno, T, Kitamura, O, Terashima, S & Tatsumi, K 2001, '50 μm fine pitch ball bonding technology', Nippon Steel Technical Report, no. 84, pp. 24-29.
Uno T, Kitamura O, Terashima S, Tatsumi K. 50 μm fine pitch ball bonding technology. Nippon Steel Technical Report. 2001 Jul;(84):24-29.
Uno, Tomohiro ; Kitamura, Osamu ; Terashima, Shinichi ; Tatsumi, Kohei. / 50 μm fine pitch ball bonding technology. In: Nippon Steel Technical Report. 2001 ; No. 84. pp. 24-29.
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